Are Perovskite Solar Cell Potential‐Induced Degradation Proof?

Abstract

Potential‐induced degradation (PID) is a solar cell‐related degradation mechanism due to high potential difference in a photovoltaic (PV) module between the solar cells and its grounded frame. This type of degradation is well known for silicon PV; however, for perovskites it has not been thoroughly researched yet. Herein, the PID of perovskite solar cells is investigated for bias voltages of ±500 V, half of the currently used system voltage, and ±1000 V with regular I–V and electroluminescence measurements during the test. The devices show a high PID resistance under applied bias of ±500 V, far exceeding the recommended guidelines for silicon PV. However, for the bias voltage of –1000 V a rapid degradation is observed due to the ingress of sodium ions from the glass substrate as confirmed by the time‐of‐flight secondary ion mass spectrometry measurements of spatial and depth distribution of elements in solar cells. Positively biased devices show no degradation due to high voltage exposure. These results show promising signs that perovskite solar cells are PID proof for current PV system designs.

Performance of Monolithic Two‐ and Three‐Terminal Perovskite/Silicon Tandem Solar Cells Under Varying Illumination Conditions

“…[44] These processes, however, are not feasible in industrial-scale applications where the occurrence of pinholes remains a major concern. [41,45] The formation of pinholes leads to direct contact between the perovskites, ETL and HTL, and thereby a reduced shunt resistance. In Ref.…”

High-performance large-area perovskite photovoltaic modules

“…Firstly, the laser energy leads to the local degradation of the perovskite film during the P2 etching [78]. Secondly, if the P2 scribe is not thoroughly removed, there is additional shunt resistance at interconnections, which can accelerate potential-induced degradation [79,80]. Thirdly, impurities may degrade perovskite film due to an unclean etching environment.…”

AFM Study of Roughness Development during ToF-SIMS Depth Profiling of Multilayers with a Cs+ Ion Beam in a H2 Atmosphere

“…Ion sputtering is the main process taking place during an analysis based on secondary ion mass spectrometry (SIMS) . It is also an essential process for depth profiling, combined with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). − All three methods employ ion guns for sputtering, although the sputtering process itself is also present in the case of glow-discharge optical emission spectroscopy (GDOES) or glow-discharge mass spectrometry (GDMS). ,− The main difference is the characteristic of the GDOES or GDMS processes, as ions are intrinsic to the plasma that flows toward the cathode, causing its surface to be sputtered away. , These methods are used in many areas of research, for example, during the analysis of oxide layers, while studying corrosion properties, polymer films, mono- and multilayers, biomaterials, microelectronics, , power-storage materials, solar cells, , and catalysts . However, regardless of the exact process used for the ion sputtering, the ion beam generated by the ion gun or the plasma flow, some damage caused by the ion bombardment is always present. − The accumulation of damage is observed as surface roughening, which is most commonly determined with atomic force microscopy (AFM). , This technique is especially suitable for the characterization of nanostructures formed on the surface since it is optimized to achieve molecular and atomic resolutions. − However, AFM can also be used to study many other topographical characteristics of the sample, its conductivity at the nano level, and different forces using its spectroscopy mode. − …”

“… 3 , 5 − 7 The main difference is the characteristic of the GDOES or GDMS processes, as ions are intrinsic to the plasma that flows toward the cathode, causing its surface to be sputtered away. 6 , 8 These methods are used in many areas of research, for example, during the analysis of oxide layers, 9 while studying corrosion properties, 10 polymer films, 11 mono- and multilayers, 12 biomaterials, 13 microelectronics, 14 , 15 power-storage materials, 16 solar cells, 17 , 18 and catalysts. 19 However, regardless of the exact process used for the ion sputtering, the ion beam generated by the ion gun or the plasma flow, some damage caused by the ion bombardment is always present.…”