HIGHLIGHTS• Lead-based halide perovskite materials have revealed excellent properties in optoelectronic applications. However, the material stability and the toxicity of lead still hinder their large-scale commercial applications.• Lead-free halide double perovskite materials possess the characteristics of environmental friendliness, exceptional stability and tunable optoelectronic properties.• A limited number of halide double perovskites have been synthesized, and extremely few have been developed for optoelectronic applications. Continuing effort is needed to explore more halide double perovskites and modulate the properties for their further applications.ABSTRACT Lead-based halide perovskites have emerged as excellent semiconductors for a broad range of optoelectronic applications, such as photovoltaics, lighting, lasing and photon detection. However, toxicity of lead and poor stability still represent significant challenges. Fortunately, halide double perovskite materials with formula of A 2 M(I)M(III)X 6 or A 2 M(IV)X 6 could be potentially regarded as the films still manifest low quality for photovoltaic applications. Therefore, we propose that continuing efforts are needed to develop more halide double perovskites, modulate the properties and grow high-quality films, with the aim of opening the wild practical applications.

Nonradiative recombination, the main energy loss channel for open circuit voltage (V oc), is one of the crucial problems for achieving high power conversion efficiency (PCE) in inverted perovskite solar cells (PSCs). Usually, grain boundary passivation is considered as an effective way to reduce nonradiative recombination because the defects (uncoordinated ions) on grain boundaries are passivated. We added the hydroxyl and carbonyl functional groups containing carbon quantum dots (CQDs) into a perovskite precursor solution to passivate the uncoordinated lead ions on grain boundaries. Higher photoluminescence intensity and longer carrier lifetime were demonstrated in the perovskite film with the CQD additive. This confirmed that the addition of CQDs can reduce nonradiative recombination by grain boundary passivation. Additionally, the introduction of CQDs could increase the thickness of the perovskite film. Consequently, we achieved a champion device with a PCE of 18.24%. The device with CQDs retained 73.4% of its initial PCE after being aged for 48 h under 80% humidity in the dark at room temperature. Our findings reveal the mechanisms of how CQDs passivate the grain boundaries of perovskite, which can improve the efficiency and stability of PSCs.

Neuromorphic computing simulates the operation of biological brain function for information processing and can potentially solve the bottleneck of the von Neumann architecture. This computing is realized based on memristive hardware neural networks in which synaptic devices that mimic biological synapses of the brain are the primary units. Mimicking synaptic functions with these devices is critical in neuromorphic systems. In the last decade, electrical and optical signals have been incorporated into the synaptic devices and promoted the simulation of various synaptic functions. In this review, these devices are discussed by categorizing them into electrically stimulated, optically stimulated, and photoelectric synergetic synaptic devices based on stimulation of electrical and optical signals. The working mechanisms of the devices are analyzed in detail. This is followed by a discussion of the progress in mimicking synaptic functions. In addition, existing application scenarios of various synaptic devices are outlined. Furthermore, the performances and future development of the synaptic devices that could be significant for building efficient neuromorphic systems are prospected.

Memristors have attracted considerable attention as one of the four basic circuit elements besides resistors, capacitors, and inductors. Especially, the nonvolatile memory devices have become a promising candidate for the new-generation information storage, due to their excellent write, read, and erase rates, in addition to the low-energy consumption, multistate storage, and high scalability. Among them, halide perovskite (HP) memristors have great potential to achieve low-cost practical information storage and computing. However, the usual lead-based HP memristors face serious problems of high toxicity and low stability. To alleviate the above issues, great effort has been devoted to develop lead-free HP memristors. Here, we have summarized and discussed the advances in HP memristors from lead-based to lead-free materials including memristive properties, stability, neural network applications, and memristive mechanism. Finally, the challenges and prospects of lead-free HP memristors have been discussed.

Anatase TiO2 nanoparticles with exposed {001} facets were synthesized from Ti powder via a sequential hydrothermal reaction process. At the first-step hydrothermal reaction, H-titanate nanowires were obtained in NaOH solution with Ti powder, and at second-step hydrothermal reaction, anatase TiO2 nanoparticles with exposed {001} facets were formed in NH4F solution. If the second-step hydrothermal reaction was carried out in pure water, the H-titanate nanowires were decomposed into random shape anatase-TiO2 nanostructures, as well as few impurity of H2Ti8O17 phase and rutile TiO2 phase. Then, the as-prepared TiO2 nanostructures synthesized in NH4F solution and pure water were applied to the photoanodes of dye-sensitized solar cells (DSSCs), which exhibited power conversion efficiency (PCE) of 7.06% (VOC of 0.756 V, JSC of 14.80 mA/cm2, FF of 0.631) and 3.47% (VOC of 0.764 V, JSC of 6.86 mA/cm2, FF of 0.662), respectively. The outstanding performance of DSSCs based on anatase TiO2 nanoparticles with exposed {001} facets was attributed to the high activity and large special surface area for excellent capacity of dye adsorption.

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Organic cation and halide anion defects are omnipresent in the perovskite films, which will destroy perovskite electronic structure and downgrade the properties of devices. Defect passivation in halide perovskites is crucial to the application of solar cells. Herein, tiny amounts of trivalent rhodium ion incorporation can help the nucleation of perovskite grain and passivate the defects in the grain boundaries, which can improve efficiency and stability of perovskite solar cells. Through first-principle calculations, rhodium ion incorporation into the perovskite structure can induce ordered arrangement and tune bandgap. In experiment, rhodium ion incorporation with perovskite can contribute to preparing larger crystalline and uniform film, reducing trap-state density and enlarging charge carrier lifetime. After optimizing the content of 1% rhodium, the devices achieved an efficiency up to 20.71% without obvious hysteresis, from 19.09% of that pristine perovskite. In addition, the unencapsulated solar cells maintain 92% of its initial efficiency after 500 h in dry air. This work highlights the advantages of trivalent rhodium ion incorporation in the characteristics of perovskite solar cells, which will promote the future industrial application.

Efficient perovskite solar cells fabricated by manganese cations incorporated in hybrid perovskites.