Approaching Quantization in Macroscopic Quantum Spin Hall Devices through Gate Training

Abstract

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Engineering topological phases in triple HgTe/CdTe quantum wells

“…In all cases, the quantized conductance of HgTe-based QWs shows significant fluctuations, with experimental values different from the ones predicted theoretically through Landauer-Buttiker formalism. The deviation from the theoretical prediction has been attributed to many different effects, including disorder 33 , 34 , charge puddles 35 , 36 , and many sources of inelastic scattering 37 . Despite the deviation from theoretical results, recent improvements in sample growth has lead to measurements closer to the predicted quantization 36 , 38 .…”

“…The deviation from the theoretical prediction has been attributed to many different effects, including disorder 33 , 34 , charge puddles 35 , 36 , and many sources of inelastic scattering 37 . Despite the deviation from theoretical results, recent improvements in sample growth has lead to measurements closer to the predicted quantization 36 , 38 .…”

Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

“…After increasing the QW width above the critical one, the HgCdTe/CdHgTe heterostructure turns into the 2D topological insulator, providing the edge states protected from the back-scattering [ 14 ]. Recent successes in detecting these states in samples with micron size [ 15 ] suggest that new types of “topological” THz detectors are on the verge of becoming reality [ 16 ]. Finally, the high mobility of nearly massless carriers is also the strong card for terahertz (THz) plasmonics.…”

The Coulomb Impurity in 2D Materials with Strong Spin–Orbit Interaction

“…Impurities play an important role in studying new materials not only because in many cases they dramatically affect the fundamental properties of the latter (a good example is the failure of the conductance quantization in the edge states of topological insulators [1,2] ), but mainly because it is the electronic structure of the impurity states that the nontrivial material properties are manifested in most strikingly. Take for instance the phenomenon of falling to the center and the presence of a critical charge of impurities in graphene, [3,4] the nontrivial electronic structure of impurities in 3D and 2D topological insulators, [5][6][7] numerous nontrivial manifestations of impurities in the properties of dichalcogenides, [8] and so on.…”