Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

“…Thus, the low-energy signal probably originates from a displacement current caused by recharging of traps in the insulator near the interface of InAs with Al 2 O 3 . Indeed, the ALD-grown alumina layers are known to contain a considerable density of electron traps (acceptor states) 39,40 which may trap electrons optically excited in the nearby electrode, thus leading to the observed low-level (<10 fA) re-charging current.…”

Comment on “A model for internal photoemission at high-k oxide/silicon energy barriers” [J. Appl. Phys. 112, 064115 (2012)]

“…5, cannot immediately be distinguished from the true IPE current and requires additional experimental efforts to be revealed. The presence of electron traps in deposited metal oxides is long known 12 and there are no arguments to ignore this factor: Our field-induced injection measurements reveal the presence of such traps in all materials available for such analysis, including Y 2 O 3 , 13 Al 2 O 3 , 14 and other oxides. The most reliable way to separate the IPE-related photocurrent from the trap-mediated signal consists in correlating the spectral features found on the photocurrent yield spectra with the density of electron states in the emitting electrode.…”

Injection Spectroscopy of Thin Layers of Solids

“…5.2. The photo-active electron traps are well known to be present in several insulating materials like SiO 2 , Al 2 O 3 , Si 3 N 4 , Y 2 O 3 and their study requires either use of a wavelength-selected IPE injection or application of an alternative injection method (Wang et al, 2009(Wang et al, , 2012Zahid et al, 2010). Finally, when using the sandwich sample structure for IPE experiments, double-interface injection, i.e., simultaneous IPE of charge carriers of opposite sign from the opposite interfaces of the collector, might become a problem.…”

“…5.5. Although this tunnelling injection approach is rather limited in its application because of complex sample processing, the simplicity of its experimental realization makes it as an attractive alternative to IPE injection, particularly if PI of trapped electrons must be avoided (Wang et al, 2009(Wang et al, , 2012Zahid et al, 2010).…”