Applications of wear-resistant thick films formed by physical vapor deposition processes

Nakamura, Kazuo; Inagawa, Konosuke; Tsuruoka, Kazuyuki; Komiya, Souji

doi:10.1016/0040-6090(77)90115-8

Cited by 96 publications

(8 citation statements)

References 8 publications

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“…Hence the ␦-TiN x /BN composite can be used as a heater for melting various metals or alloys. Furthermore, some novel electrical properties may be obtained in the ␦- ␦-TiN x is usually synthesized by self-propagating combustion under high nitrogen pressure and high temperature [2], and activated reactive evaporation [3]. It was reported recently that ␦-TiN x was prepared by mechanical milling of metal Ti in a nitrogen atmosphere [4].…”

Section: Introductionmentioning

confidence: 99%

Formation of titanium nitride by mechanical milling and isothermal annealing of titanium and boron nitride

Ding

Qiu

et al. 2005

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Formation of titanium nitride by mechanical milling and isothermal annealing of titanium and boron nitride

Ding

Qiu

et al. 2005

Journal of Alloys and Compounds

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“…3 The TiN films fabricated by PVD has a long history and earlier reports may go back to 1977. 4,5 Some of the previous studies have focused on the relationship between the mechanical properties and the parameters of deposition. For instance, the adhesion at the coating/substrate interface and the hardness of films can be optimized by varying the flow of reactive gas during deposition.…”

Section: Introductionmentioning

confidence: 99%

Effects of bias on surface properties of TiN films fabricated by hollow cathode discharge

Jiang

Tian

Yang

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Titanium nitride ͑TiN͒ films have been deposited on AISI 304 stainless steel substrates using hollow cathode reactive plasma vapor deposition. Titanium is introduced by sputtering the Ti cathode nozzle and TiN is formed in the presence of a nitrogen plasma excited by radio frequency. The substrate bias voltage is varied from 0 to − 300 V to investigate its effect on the mechanical and structural properties of the films. X-ray diffraction results show the formation of TiN ͑111͒ and Ti 2 N ͑220͒ phases in the films. The sample bias has a critical influence on the thickness of the deposited films. The bias of −200 V leads to the thickest films ͑about 1680 nm͒ and the deposition rate is 18.7 nm/ min. The microhardness, root-mean-square ͑rms͒ roughness values, and tribological properties also exhibit nonlinear relationship with increasing bias voltages. The highest hardness of about 1027 hardness vickers and best wear resistance are achieved at a bias voltage of −100 V. Atomic force microscopy results reveal the lowest rms surface roughness of 3.19 nm when the bias voltage is −200 V.

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“…High-temperature ceramics constitute a very useful class of materials due to their high melting point, strength, and stability at elevated temperatures. For example, TiN films are successfully applied as wearprotection coatings for tools and mechanical components [1][2][3][4][5] decoration coatings, [6][7][8] electrical contacts, and diffusion barriers in electronic devices, 9,10 because of their excellent corrosion and erosion resistance, high hardness, high thermal stability and desirable optical, and electrical properties. However, there are disadvantages associated with these materials in terms of poor toughness and ductility that severely limit their applications.…”

Section: Introductionmentioning

confidence: 99%

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon

et al. 2001

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We investigated mechanical properties of TiN as a function of microstructure varying from nanocrystalline to single crystal TiN films deposited on (100) silicon substrates. By varying the substrate temperature from 25 to 700 °C during pulsed laser deposition, the microstructure of TiN films changed from nanocrystalline (having a uniform grain size of 8 nm) to a single crystal epitaxial film on the silicon (100) substrate. The microstructure and epitaxial nature of these films were investigated using x-ray diffraction and high-resolution transmission electron microscopy. Hardness measurements were made using nanoindentation techniques. The nanocrystalline TiN contained numerous triple junctions without any presence of amorphous regions. The width of the grain boundary remained constant at less than 1 nm as a function of boundary angle. Similarly the grain boundary structure did not change with grain size. The hardness of TiN films decreased with decreasing grain size. This behavior was modeled recently involving grain boundary sliding, which is particularly relevant in the case of hard materials such as TiN.

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Applications of wear-resistant thick films formed by physical vapor deposition processes

Cited by 96 publications

References 8 publications

Formation of titanium nitride by mechanical milling and isothermal annealing of titanium and boron nitride

Formation of titanium nitride by mechanical milling and isothermal annealing of titanium and boron nitride

Effects of bias on surface properties of TiN films fabricated by hollow cathode discharge

Mechanical properties of nanocrystalline and epitaxial TiN films on (100) silicon

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