Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97)
DOI: 10.1109/sensor.1997.613726
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Applications of dynamic techniques for accurate determination of silicon nitride Young's moduli

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Cited by 8 publications
(5 citation statements)
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“…Previous studies have shown, based on finite element model (FEM) simulations [25][26][27][28][29], that the mechanical stiffness of cMUTs can be significantly modified by residual stresses in the moving part, even if mechanical laws mainly obey to the plate equation. Depending on their sign, residual stresses can be compressive or tensile and so, in opposition or in addition with the return stresses of the plate.…”
Section: Discussion: Comparison With Si Substratementioning
confidence: 99%
See 1 more Smart Citation
“…Previous studies have shown, based on finite element model (FEM) simulations [25][26][27][28][29], that the mechanical stiffness of cMUTs can be significantly modified by residual stresses in the moving part, even if mechanical laws mainly obey to the plate equation. Depending on their sign, residual stresses can be compressive or tensile and so, in opposition or in addition with the return stresses of the plate.…”
Section: Discussion: Comparison With Si Substratementioning
confidence: 99%
“…As explained previously, studies presented are often theoretical and origins of the stresses are rarely discussed. Usually, only the residual mechanical stress of the cMUT membrane is measured in order to investigate the initial deflection and the Young's modulus extracted [27,28]. However, to ensure process reproducibility and better control of the device fabricated, it is important to identify process steps which have a significant impact on residual stresses.…”
Section: Residual Stress Monitoring Of the Low Temper Ature Fabricati...mentioning
confidence: 99%
“…This simultaneous detection enables us to measure the motion at the end of the cantilever within two degrees of freedom, i.e. normal displacement and displacement slope [13]. In the case of higher harmonic excitation, the method allows the characterization of displacement and mode order with high accuracy.…”
Section: Methodsmentioning
confidence: 99%
“…Our four-frame phase stepping approach involves recording four interferograms I, '2, 13 and 14 mutually phase shifted by rc/2 for the static and resonance states. Dividing the computational results (I -J3)2 + ('2 - 14) obtained for the vibrating and static object states we get 12:…”
Section: Testing Silicon Elements By Time-average Interferometry Withmentioning
confidence: 99%