2016
DOI: 10.1088/0960-1317/26/11/115023
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Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate

Abstract: The possibility of fabricating capacitive micromachined ultrasonic transducers (cMUTs) on glass substrates may open the way for new fields of application in which the transparency of the substrate is advantageous. In this study, we demonstrate that a low-temperature process can be carried out to achieve cMUTs on glass substrates. Limited to temperatures lower than 400 °C, the process is based on the use of nickel as a sacrificial layer. The cMUT electromechanical behavior is studied and the performance compare… Show more

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Cited by 3 publications
(4 citation statements)
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“…Besides the first investigations reported in [14] , where infrared transparency was achieved by thinning the silicon microfabrication substrate down to 100 μm, the successful microfabrication of CMUTs on an optically transparent substrate (i.e. glass), was shown in [26] , [27] . Furthermore, CMUT with through-glass-via interconnects fabrication was reported in [28] , possibly enabling the access to 3D-integration technologies.…”
Section: Discussionmentioning
confidence: 95%
“…Besides the first investigations reported in [14] , where infrared transparency was achieved by thinning the silicon microfabrication substrate down to 100 μm, the successful microfabrication of CMUTs on an optically transparent substrate (i.e. glass), was shown in [26] , [27] . Furthermore, CMUT with through-glass-via interconnects fabrication was reported in [28] , possibly enabling the access to 3D-integration technologies.…”
Section: Discussionmentioning
confidence: 95%
“…The optimized membrane thickness in bandwidth of interest is 2.2-um, and the gap (95-nm) is optimized to obtain ~1–2MPa peak-to-peak pressure with 30–60V pulses when operated in the non-collapsed mode [19]. Due to the residual stress and atmospheric pressure [9, 20, 21] on the Si x N y membrane, the static deflection of about 15–18 nm is observed and as a result, the sacrificial layer (Cu) thickness which forms the CMUT’s gap is designed to be around 110-nm.…”
Section: Cmut Designmentioning
confidence: 99%
“…The key for monolithic integration is the low temperature CMUT fabrication process. Although low temperature wafer bonding [5, 6] is demonstrated, sacrificial layer based processes are also widely used [3, 7, 8, 9]. Sacrificial layer process does not need large areas for reliable bonding which can reduce the active area of the transducer element, and hence can be especially suitable for high frequency applications with smaller lateral membrane dimensions.…”
Section: Introductionmentioning
confidence: 99%
“…To adress this aim, there many attemps to increase CMUT output performance (Bayram et al 2005;Olcum et al 2005Olcum et al , 2011F. Y. Yamaner KSÜ Mühendislik Bilimleri Dergisi, 21(4):280-285, 2018 281 KSU Journal of Engineering Sciences, 21(4): 280-285, 2018280-285, F. Yıldız et al 2012) Determination of fabrication process related stress on vibrating membrane is one of these attemps because it affects CMUT membrane performance in terms of collapse voltage, resonance frequency and gap distance (Bahette et al 2016;Yaralioglu et al 2001) . It is known that membrane formation using surface micromachining induces stress on membrane due to variety deposition processes (Ergun et al 2005).Similar to surface micromachining, CMUT fabrication with wafer bonding technology has cause stress on membrane due to high bonding temperature.…”
Section: Introductionmentioning
confidence: 99%