Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers

Lomov, A. A.; Bushuev, V. A.; Kartsev, A. A.; Karavanskiĭ, V. A.; Васильев, А. Л.

doi:10.1134/s1063774509030031

Cited by 5 publications

(4 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was experimentally proven [3,12] that in some cases the parameters of thin single layer and multilayered peri odic structures of PS can be determined in a wide range of porosities based on continuum models. A successful attempt at simulating rocking curves from several micrometer thick uniform PS layers was made in [13]. However, the occurrence of new 3D locally inhomogeneous materials and PS structures [14] requires developing the existing techniques.…”

Section: Introductionmentioning

confidence: 99%

X-ray scattering by porous silicon modulated structures

et al. 2012

Self Cite

View full text Add to dashboard Cite

A multilayered porous structure formed as a result of the anodization of a Si(111)(Sb) substrate in an HF:C 2 H 5 OH (1 : 2) solution with a periodically alternating current has been investigated by high resolu tion X ray diffraction. It is established that, despite 50% porosity, a thickness of 30 μm, and significant strain (4 × 10 -3 ), the porous silicon structure consists mainly of coherent crystallites. A model of coherent scatter ing from a multilayered periodic porous structure is proposed within the dynamic theory of diffraction. It is shown that the presence of gradient strains of 5 × 10 -4 or higher leads to phase loss upon scattering from porous superlattices and the suppression of characteristic satellites in rocking curves.

show abstract

Section: Introductionmentioning

confidence: 99%

X-ray scattering by porous silicon modulated structures

et al. 2012

Self Cite

View full text Add to dashboard Cite

show abstract

“…We took into consideration the fact that the porosity can be related to the static Debye-Waller factor, which expresses the fraction of the elastic scattering with respect to the total scattering. In this framework, it becomes conceivable to determine the static Debye-Waller factor (f DW ) gradient using grazing-incidence X-ray diffraction, which further enables us to describe quantitatively the porosity gradient (Lomov et al, 1995(Lomov et al, , 2009Buttard et al, 1998). In fact, on fine-tuning the X-ray penetration depth, a positive porosity gradient with an exponential dependence was revealed, and a computable equation was proposed for each of the sample porosities.…”

Section: Introductionmentioning

confidence: 99%

X-ray scattering profiles: revealing the porosity gradient in porous silicon

et al. 2021

View full text Add to dashboard Cite

Porous silicon layers with different porosities were prepared by adjusting the anodization current density of the electrochemical etching process, starting from highly doped p-type crystalline silicon wafers. The microstructural parameters of the porous layers were assessed by high-resolution X-ray diffraction, total external reflection, scanning electron microscopy and nitrogen adsorption–desorption analysis. Furthermore, both the surface porosity and the mean porosity for the entire volume of the samples were estimated by employing total external reflection measurements and X-ray reciprocal-space mapping, respectively. The results clearly indicate that the surface porosity is different from the mean porosity, and the presence of a depth porosity gradient is suggested. To evaluate the porosity gradient in a nondestructive way, a new laboratory method using the grazing-incidence X-ray diffraction technique is reported. It is based on the analysis of the X-ray scattering profiles of the porous layers to obtain the static Debye–Waller factors. In this way, a description of the porosity gradient in a quantitative framework becomes possible, and, as a result, it was shown that the porosity increases exponentially with the X-ray penetration depth. Moreover, a strong dependence between the porosity gradient and the anodization current was demonstrated. Thus, in the case of the lowest anodization current (e.g. 50 mA cm−2) a variation of only 15% of the porosity from the surface to the interface is found, but when applying a high anodization current of 110 mA cm−2 the porosity close to the bulk interface is almost three times higher than at the surface.

show abstract

“…It has been shown that crystalline quality and deformation of the porous layers depend on a lot of parameters, and in some cases the silicon skeleton persists as a result of the high quality of the bulk material and voids have various kinds and ordering. A numerical analysis of the specific features in the Bragg scattering from such structures was made by Lomov et al (1995Lomov et al ( , 2009 and Buttard et al (1998). It was shown that in a porous material with a high degree of crystal lattice coherence one can use the intensity of X-ray diffraction to obtain information on the thickness, deformation and statistical Debye-Waller factor, and on the degree of porosity in the layers.…”

Section: Introductionmentioning

confidence: 99%

High-resolution synchrotron diffraction study of porous buffer InP(001) layers

Lomov

Пунегов²,

Nohavica³

et al. 2014

J Appl Cryst

View full text Add to dashboard Cite

Author(s) of this paper may load this reprint on their own web site or institutional repository provided that this cover page is retained. Republication of this article or its storage in electronic databases other than as specified above is not permitted without prior permission in writing from the IUCr.For further information see http://journals.iucr.org/services/authorrights.html Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusioncontrolled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.Crystallography Journals Online is available from journals.iucr.org J. Appl. Cryst. (2014 X-ray reciprocal space mapping was used for quantitative investigation of porous layers in indium phosphide. A new theoretical model in the frame of the statistical dynamical theory for cylindrical pores was developed and applied for numerical data evaluation. The analysis of reciprocal space maps provided comprehensive information on a wide range of the porous layer parameters, for example, layer thickness and porosity, orientation, and correlation length of segmented pore structures. The results are in a good agreement with scanning electron microscopy data.

show abstract

Application of X-ray diffraction methods in the study of micrometer-sized porous Si layers

Cited by 5 publications

References 7 publications

X-ray scattering by porous silicon modulated structures

X-ray scattering by porous silicon modulated structures

X-ray scattering profiles: revealing the porosity gradient in porous silicon

High-resolution synchrotron diffraction study of porous buffer InP(001) layers

Contact Info

Product

Resources

About