X-ray scattering by porous silicon modulated structures

Lomov, A. A.; Пунегов, В. И.; Karavanskiĭ, V. A.; Васильев, А. Л.

doi:10.1134/s1063774511060162

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…is 5.427 Å for bulk Si, while for pSi it can be evaluated using the coherent scattering, observed as an elongated area along the q z direction (marked in our figures with black dashed lines). It appears as an intense band, indicating the lattice parameter variation along the h001i direction (Miu et al, 2011) and the presence of a strain gradient (Lomov et al, 2012). In addition to the coherent scattering, a transverse streak is observable, determined by the X-ray diffuse scattering occurring in the porous structure [this region is marked with orange dashed lines in the (004) RSM graphs].…”

Section: Research Papersmentioning

confidence: 99%

X-ray scattering profiles: revealing the porosity gradient in porous silicon

et al. 2021

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Porous silicon layers with different porosities were prepared by adjusting the anodization current density of the electrochemical etching process, starting from highly doped p-type crystalline silicon wafers. The microstructural parameters of the porous layers were assessed by high-resolution X-ray diffraction, total external reflection, scanning electron microscopy and nitrogen adsorption–desorption analysis. Furthermore, both the surface porosity and the mean porosity for the entire volume of the samples were estimated by employing total external reflection measurements and X-ray reciprocal-space mapping, respectively. The results clearly indicate that the surface porosity is different from the mean porosity, and the presence of a depth porosity gradient is suggested. To evaluate the porosity gradient in a nondestructive way, a new laboratory method using the grazing-incidence X-ray diffraction technique is reported. It is based on the analysis of the X-ray scattering profiles of the porous layers to obtain the static Debye–Waller factors. In this way, a description of the porosity gradient in a quantitative framework becomes possible, and, as a result, it was shown that the porosity increases exponentially with the X-ray penetration depth. Moreover, a strong dependence between the porosity gradient and the anodization current was demonstrated. Thus, in the case of the lowest anodization current (e.g. 50 mA cm−2) a variation of only 15% of the porosity from the surface to the interface is found, but when applying a high anodization current of 110 mA cm−2 the porosity close to the bulk interface is almost three times higher than at the surface.

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Section: Research Papersmentioning

confidence: 99%

X-ray scattering profiles: revealing the porosity gradient in porous silicon

et al. 2021

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High-resolution X-ray diffraction in crystalline structures with quantum dots

Пунегов¹

2015

Phys.-Usp.

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We review the current status of nondestructive highresolution X-ray diffractometry research on semiconductor structures with quantum dots (QDs). The formalism of the statistical theory of diffraction is used to consider the coherent and diffuse X-ray scattering in crystalline systems with nanoinclusions. Effects of the shape, elastic strain, and lateral and vertical QD correlation on the diffuse scattering angular distribution near the reciprocal lattice nodes are considered. Using short-period and multicomponent superlattices as an example, we demonstrate the efficiency of data-assisted simulations in the quantitative analysis of nanostructured materials. Contents 1. Introduction. Methods of research on structures with quantum dots 419 2. High-resolution X-ray diffraction 420 2.1 Triple-axis X-ray diffractometry; 2.2 Statistical theory of X-ray diffraction. Coherent and diffuse scattering; 2.3 Direct and inverse X-ray diffraction problems 3. X-ray diffraction in structured media 423 3.1 Multilayer quantum dots; 3.2 Semiconductor structures with self-organized quantum dots; 3.3 Diffraction on 3D periodic quantum dot arrays 4. Influence of the quantum dot shape, size, and elastic strain on X-ray diffuse scattering 426 4.1 Diffuse scattering from epitaxial structures with quantum dots of different shapes; 4.2 Spheroidal quantum dots 5. Spatial correlations in the arrangement of quantum dots 432 5.1 Lateral correlation of quantum dots. Short-range order; 5.2 Vertical correlation of quantum dots 6. Quantitative X-ray diffraction analysis of heterostructures with quantum dots 437 6.1 Short-period superlattices with quantum dots; 6.2 Multicomponent heterostructures with quantum dots 7. Conclusion 443 References 443 Physics ± Uspekhi 58 (5) 419 ± 445 (2015) # 2015 Uspekhi Fizicheskikh Nauk, Russian Academy of Sciences V I Punegov Physics ± Uspekhi 58 (5) V I Punegov Physics ± Uspekhi 58 (5) V I Punegov Physics ± Uspekhi 58 (5)

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High-resolution X-ray diffraction in crystalline structures with quantum dots

Пунегов¹

2015

Usp. Fiz. Nauk

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X-ray scattering by porous silicon modulated structures

Cited by 3 publications

References 13 publications

X-ray scattering profiles: revealing the porosity gradient in porous silicon

X-ray scattering profiles: revealing the porosity gradient in porous silicon

High-resolution X-ray diffraction in crystalline structures with quantum dots

High-resolution X-ray diffraction in crystalline structures with quantum dots

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