Application of the Quantized Hall Effect to a New Resistance Standard at VSL

Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based. one InP based) are reported. RH(^) is measured in terms of Q L C ~E by means of a resistanceratio measurement bridge using a cryogenic current comparator.The peak-to-peak scatter of the results is 8.5 x An estimation of RH (i = 2) in terms of RLCIE is given with a l o (one standard deviation) total uncertainty of 2.2 x 1 O-'.

show abstract

“…For sample VII. and for a given Hall-probe set and magnetic-field polarity, we found: a = + 0.073 (10) .…”

Section: Temperature Effect On Rh (I) Andmentioning

confidence: 70%

Precise Quantized Hall Resistance Measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP Heterostructures

Delahaye¹,

Domı́nguez²,

Alexandre³

et al. 1986

Metrologia

View full text Add to dashboard Cite

show abstract

“…The linear relationship between R H and R xx can be described by an effective geometric coupling. In GaAs-QHRS, this coupling is usually explained by the finite width of the voltage terminal arms with respect to the Hall bar channel 5 27 or the inhomogeneous circulation of the current (for example, due to the residual inhomogeneity of the carrier density) 28 29 . The first mechanism would lead to a coupling factor of (− l / W )=−0.2, where l =20 μm is the width of the voltage arm and W =100 μm is the width of the Hall bar channel.…”

Section: Resultsmentioning

confidence: 99%

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

et al. 2015

View full text Add to dashboard Cite

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

show abstract

“…For many heterostructure devices, the 2DES is created by growing interface layers via molecular beam epitaxy. For the GaAs-based device shown in figure 1, a 2DES is formed at low temperature when confinement potentials result from the positively charged ions present in the AlGaAs (insulating) layer [22][23][24][25][26][27][28][29]. Similar 2DES heterostructures have been developed in InGaAs/InP, which is obtained via metalorganic chemical vapor deposition [30].…”

Section: Using Gaas-based Heterostructuresmentioning

confidence: 85%

The quantum Hall effect in the era of the new SI

Rigosi

Elmquist

2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the foundation of the ohm while also expanding its territory into other SI derived units. The foundation, evolution, and significance of all of these devices exhibiting some form of the QHE will be described in the context of optimizing future electrical resistance standards. As the world adapts to using the quantum SI, it remains essential that the global metrology community pushes forth and continues to innovate and produce new technologies for disseminating the ohm and other electrical units.

show abstract

Application of the Quantized Hall Effect to a New Resistance Standard at VSL

Cited by 12 publications

References 2 publications

Precise Quantized Hall Resistance Measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP Heterostructures

Precise Quantized Hall Resistance Measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP Heterostructures

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

The quantum Hall effect in the era of the new SI

Contact Info

Product

Resources

About

Application of the Quantized Hall Effect to a New Resistance Standard at VSL

Cited by 12 publications

References 2 publications

Precise Quantized Hall Resistance Measurements in GaAs/AlxGa1-xAs and InxGa1-xAs/InP Heterostructures

Precise Quantized Hall Resistance Measurements in GaAs/AlxGa1-xAs and InxGa1-xAs/InP Heterostructures

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

The quantum Hall effect in the era of the new SI

Contact Info

Product

Resources

About

Precise Quantized Hall Resistance Measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP Heterostructures

Precise Quantized Hall Resistance Measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP Heterostructures