Precise Quantized Hall Resistance Measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP Heterostructures

Abstract

Measurements of the quantized Hall resistance RH (i) (i = 2 or 4) in 7 different heterostructures (six GaAs based. one InP based) are reported. RH(^) is measured in terms of Q L C ~E by means of a resistanceratio measurement bridge using a cryogenic current comparator.The peak-to-peak scatter of the results is 8.5 x An estimation of RH (i = 2) in terms of RLCIE is given with a l o (one standard deviation) total uncertainty of 2.2 x 1 O-'.

A prototype of RK/200 quantum Hall array resistance standard on epitaxial graphene

“…Whenever the Fermi energy lies inside a mobility gap between two Landau levels 3 , transversal resistivity becomes equal to R K /ν, where the filling factor ν is an integer, and longitudinal resistivity vanishes. It has been established that as long as good quantization 4 is achieved, the value of quantum Hall resistance is universal, that is, does not depend on the device nor the material within the best available measurement precision [5][6][7] . The ultimate precision, which in the most accurate experiments is on the order of 10 −10 , is typically set by the signal to noise ratio which, in turn, is limited by the QHE breakdown.…”

Adjusted recommended values of the fundamental physical constants

“…A study of the material-dependent effect can be done in a different matter and in fact many tests of this kind have been performed (see, e.g., [22,23]). The related limits on violation of naive relations (1) are at the level essentially below than one part in 10 10 which is sufficient for any practical applications.…”

An automated potentiometric system for precision measurement of the quantized hall resistance

“…The quantization of the Hall resistance (1) (where h is the Planck constant, e the electron charge, and i an integer quantum number) has been demonstrated for such diverse two-dimensional electron systems as those in Si-MOSFETs [1]1 or in heterostructure devices (GaAs/ AIGaAs [2] and more recently InGaAs/InP [3]). This resistance quantization provides a very promising means to About the Authors: Giancarlo Marullo Reedtz is a physicist at the Galileo Ferraris National Electrotechnical Institute, and Marvin E. Cage, who is with the Electricity Division in the NBS Center for Basic Standards, is also a physicist.…”

“…Here the compensation voltage Ve has been written as time independent, which it is in the limits that we require (e.g., Ve need only be constant to I part in 10 3 for DIVe ratios of 10-5 if we want an accuracy of 1 part in 10 8 ). Within these limits the drift of Ve has no influence in eq (7).…”