The quantum Hall effect in the era of the new SI

Rigosi, Albert F.; Elmquist, Randolph E.

doi:10.1088/1361-6641/ab37d3

Cited by 38 publications

(17 citation statements)

References 121 publications

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“…Upon further improvement (parts per billion) and room temperature realization, QAHI could provide a primary standard of resistance in metrology instead of the quantum Hall effect, which requires low temperature and high magnetic field. [ 255,256 ] Even the anomalous Hall effect in MM–TI heterostructures has huge potential in highly sensitive and low‐power Hall sensors utilized in the fields from medical science to marine technology. [ 257,258 ]…”

Section: Discussionmentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low‐energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity‐coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

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Section: Discussionmentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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“…[1][2][3][4] Epitaxial graphene (EG) on silicon carbide (SiC), which can be grown on the centimeter scale and is one of the many methods of synthesizing graphene, exhibits properties that render it suitable for large-scale or high-current applications such as the continued development of quantized Hall resistance (QHR) standards. [5][6][7][8][9][10][11][12][13][14][15] Though modernday standards using millimeter-scale EG have been shown to have long-term electrical stability in ambient conditions, 16 these devices are, in most cases, only able to output a single value of quantized resistance (ν = 2 plateau) to a degree of accuracy which warrants possible use in metrology. The corresponding value is: One milestone for graphene QHR standards would be the eventual accessibility of different resistance values that are well-quantized.…”

Section: Introductionmentioning

confidence: 99%

Atypical quantized resistances in millimeter-scale epitaxial graphene p-n junctions

Rigosi

Patel

Marzano

et al. 2019

Carbon

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We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at ν = 2 (R H ≈ 12906 Ω) that take the form: a b R H. Here, a and b have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of R H. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.

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“…Needing no large magnetic field, QAH-based resistance metrology would be more portable and economical. QAH metrological standards would further allow for simultaneous measurement of a resistance standard alongside a Josephson voltage standard in a single cryostat, something that is not currently possible due to the magnetic fields required for measuring QH devices [8].…”

Section: Introductionmentioning

confidence: 99%

Bulk dissipation in the quantum anomalous Hall effect

Rodenbach,

Rosen,

Fox

et al. 2021

Preprint

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Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb) 2 Te 3 . We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures.

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The quantum Hall effect in the era of the new SI

Cited by 38 publications

References 121 publications

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Atypical quantized resistances in millimeter-scale epitaxial graphene p-n junctions

Bulk dissipation in the quantum anomalous Hall effect

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