Application of SiC power electronic devices in secondary power source for aircraft

Xun, Qian; Xun, Boyang; Li, Zuxin; Wang, Peiliang; Cai, Zhiduan

doi:10.1016/j.rser.2016.12.035

Cited by 67 publications

(23 citation statements)

References 27 publications

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“…This paved the way for the development of SiC power devices in the field of power electronics. Since then, more discrete devices and power modules have gradually come out [26]. Figure 1 shows the milestones of the development process of commercialized SiC semiconductor devices.…”

Section: High-temperature Componentsmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

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Section: High-temperature Componentsmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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“…Another drawback is that Si devices cannot operate at high-temperature conditions due to insufficient thermal capability, resulting in additional radiators with the increase of both volume and weight. Due to the low on-state resistance, high switching speed [8] and excellent thermal conductor of silicon carbide (SiC) devices [9][10][11], SiC-based SSCBs are expected to be widely employed in future DC power system to achieve high power density and to withstand the high-temperature environment.…”

Section: Introductionmentioning

confidence: 99%

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Qin

Xun

et al. 2019

Electronics

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Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.

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“…Silicon carbide (SiC) is an extremely useful semiconductor material which has already found applications in light-emitting diodes (LEDs) [1], detectors [2], and power devices [3] that operate at high temperatures and/or high voltages. SiC is also an excellent substrate for growing GaN-based materials [4] and, most importantly, for preparing wafer-scale epitaxial graphene using the high-temperature sublimation technique [5].…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

et al. 2019

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Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-power devices, LEDs, atomically thin electronics, and high-frequency devices, all of which can be prepared on the same SiC substrate. In this paper, we concentrate on detailed measurements on ultralow-density p-type monolayer epitaxial graphene, which has yet to be extensively studied. The measured resistivity ρxx shows insulating behavior in the sense that ρxx decreases with increasing temperature T over a wide range of T (1.5 K ≤ T ≤ 300 K). The crossover from negative magnetoresistivity (MR) to positive magnetoresistivity at T = 40 K in the low-field regime is ascribed to a transition from low-T quantum transport to high-T classical transport. For T ≥ 120 K, the measured positive MR ratio [ρxx(B) − ρxx(B = 0)]/ρxx(B = 0) at B = 2 T decreases with increasing T, but the positive MR persists up to room temperature. Our experimental results suggest that the large MR ratio (~100% at B = 9 T) is an intrinsic property of ultralow-charge-density graphene, regardless of the carrier type. This effect may find applications in magnetic sensors and magnetoresistance devices.

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Application of SiC power electronic devices in secondary power source for aircraft

Cited by 67 publications

References 27 publications

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

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