Application of PIN diodes in Physics Research

Ramírez‐Jiménez, F. J.; Mondragón-Contreras, L.; Cruz‐Estrada, P.

doi:10.1063/1.2359424

Cited by 10 publications

(3 citation statements)

References 39 publications

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“…As in [16], we decided to use a Hamamatsu S1223-01 Si-PIN photodiode (Hammamatsu, Shizuoka, Japan). This photodiode is widely used as an ion detector and there is extensive literature on its good radiation hardness [17][18][19][20][21]. Thus, the installed setup utilizes a fast electrostatic beam deflector to reduce the current and a movable Si PIN-diode directly measure the beam intensity.…”

Section: Beam Current Measurementmentioning

confidence: 99%

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Vega

Müller

Fournière

et al. 2019

QuBS

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Recently we used the heavy ion microprobe of the Buenos Aires TANDAR Laboratory for Single Event Effects (SEE) and Total Dose (TD) experiments in electronics devices and components, requiring very low beam currents. The facility includes a fast beam switch that allows the control of the ion beam current and a mobile Si PIN (p-type, intrinsic, n-type) diode that directly measures the number of ions hitting the device. The fast beam deflector was used to reduce the current by producing a pulsed beam or generating a quasi-continuous (Poisson-like distributed) beam with currents ranging from tens to hundreds of ions/s. As an application for this current control method we present a single event effect (SEE) pulses map generated by a 32S8+ beam at 75 MeV on two 0.5 µm technology CMOS digital output buffers where the device was formed by cascading four CMOS inverters with increasing sizes from input to output to drive large loads. Using the same concept of pulse width modulated deflection, we developed a novel gradient scanning method. This system allows to produce in a single irradiation a distribution with a cumulative damage with a difference of two orders of magnitude at constant gradient. To demonstrate the method, we irradiated a lithium niobate monocrystal with 32S8+ beam at 75 MeV energy and later analyzed the produced damage by the micro-Raman technique and an optical profilometer.

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Section: Beam Current Measurementmentioning

confidence: 99%

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Vega

Müller

Fournière

et al. 2019

QuBS

View full text Add to dashboard Cite

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“…The application of PIN diodes is appreciable in optical physics as it is very sensitive to light waves. PIN diode was first proposed by Kleinmann [4] which has improved characteristics due to its smaller capacitance and lesser reverse leakage current [5]. Several parameters characterize PIN diode but there is still a lack of literature which describes the effects of intrinsic region width and forward current variation on intrinsic resistance.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Ambipolar Intrinsic Resistance of PIN Diode for Different Semiconductors Suitable for Power Devices

Das

Mukherjee

Panda³

et al. 2015

Computational Advancement in Communication Circuits and Systems

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The literature of power device must be aware of the fact of proper tradeoff between the choice of semiconductor material and the proper oxide along with it. With the growing semiconductor technology, the traditional semiconductor now has the promising competitor like silicon carbide and gallium nitride. The simulation considers Shockley-Read-Hall recombination model along with ambipolar diffusion mechanism. The analysis proves SiC-3C and SiC-6H as the most promising material for PIN diode manufacturing industries. The intrinsic region width and forward current are varied keeping another parameter constant while determining the resistance. The purpose of this work is to find out the ambipolar intrinsic resistance of PIN diode which will play key role in determining total ambipolar resistance of PIN diode.

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“…PIN diode was first proposed by Kleinmann [1] which has improved characteristics due to its lower capacitance and lesser reverse leakage current [2].This device finds various applications in the field of Power Electronics because of its ability to withstand high Power and Voltage conditions.PIN diode has several properties which prove its superiority over conventional devices. Due to its unique structure, it manifests the properties pertaining to specific applications such as high voltage rectifier, RF switch, photo detector etc.…”

Section: Introductionmentioning

confidence: 99%

Search of appropriate semiconductor for PIN Diode fabrication in terms of resistance analysis

Aditya

Khandelwal

Mukherjee

et al. 2015

2015 International Conference on Recent Developments in Control, Automation and Power Engineering (RDCAPE)

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The PIN diode is a promising device in the field of power electronics due to its lower reverse leakage current and lower capacitance. Power electronics industry searches suitable semiconductors as conventional silicon saturates in context of impedance performances with a specified device configuration in the analysis of PIN diode. This paper considers the different materials like Si, Ge, GaAs, SiC-3C, SiC-4H, SiC-6H, GaN-wZ, GaN-zB, InAs to study the variation of intrinsic resistance, junction resistance and total resistance with respect to forward current as well as to study these same parameters with respect to width of the intrinsic region. The characteristics of intrinsic, junction and total resistances of PIN diodes with 10mA forward bias current and 50 micron width of the intrinsic region are noted. Finally it concludes and proposes the superior semiconductor material for PIN diode.

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Application of PIN diodes in Physics Research

Cited by 10 publications

References 39 publications

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Analysis of Ambipolar Intrinsic Resistance of PIN Diode for Different Semiconductors Suitable for Power Devices

Search of appropriate semiconductor for PIN Diode fabrication in terms of resistance analysis

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