Application of Penta-Di-Methyl-Amino-Tantalum to a Tantalum Source in Chemical Vapor Deposition of Tantalum Oxide Films

Abstract

Penta-di-methyl-amino-tantalum (Ta[N(CH3)2]5), a new source chemical of Ta in TaO chemical vapor deposition (CVD), has been studied. TG and DTA measurements show that Ta[N(CH3)2]5 is chemically stable up to about 150°C and vaporizes at a temperature of 80°C. TaO films were deposited by LP-CVD at temperatures of 380∼520°C, by using the new chemical Ta[N(CH3)2]5 and O2. The deposition rate of TaO with Ta[N(CH3)2]5 is higher than that with Ta(OC2H5)5, a conventional Ta source. The TaO CVD using Ta[N(CH3)2]5 and O2 yields a good step coverage. Although the as-deposited TaO films are oxygen poor in film composition, annealing in an oxidizing ambient improves the stoichiometry and reduces the leakage current.

Selective electroplating of copper lines on pre-patterned tantalum oxide thin films

“…During nuclear reaction analysis (NRA), the absolute oxygen content of the anodized samples within $0.5 mm of the surface was determined via the 16 O(d,p) 17 O nuclear reaction using a 972 keV deuterium primary beam at the Van-de-Graaff lab at Interface Science Western, University of Western Ontario [30]. The ion beam (approximately 1 mm in diameter) was incident on the samples along the surface normal and the detector was placed at 1358 in the scattering plane which included the incident beam.…”

“…Ta 2 O 5 thin films can be formed by many techniques such as radio frequency reactive sputtering [15], thermal oxidation [16], chemical vapor deposition (CVD) [17], plasma CVD [18], metal-organic chemical vapor deposition [19], ion assisted deposition [20], photo-assisted pulsed laser deposition [21] and anodization.…”