Application of nitrogen implantation to ULSI

Murakami, Takashi; Kuroi, T.; Kawasaki, Yoji; Inuishi, M.; Matsui, Yasuji; Yasuoka, Akihiko

doi:10.1016/s0168-583x(96)00583-6

Cited by 25 publications

(6 citation statements)

References 5 publications

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“…Figure 2 shows examples of cluster ion implantation for ultra shallow doping. Fig.3 (1) is the case of nitrogen implantation 4) , showing suppression of boron TED. 1) The mass spectrum peaked at 210 AMU, and the depth profile of the 10 keV implant was shallower than the 0.5 keV boron implantation.…”

Section: Ultra Shallow Junction Formationmentioning

confidence: 99%

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Tsukamoto¹,

Kuroi²,

Kawasaki³

et al. 2011

AIP Conference Proceedings

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Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

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Section: Ultra Shallow Junction Formationmentioning

confidence: 99%

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Tsukamoto¹,

Kuroi²,

Kawasaki³

et al. 2011

AIP Conference Proceedings

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“…Suppression of boron migration is believed to be due to the formation of boron-nitrogen complexes. Murakami et al (1997) reported boron TED suppression under high dose N co-implant conditions due to formation of EOR extended defects. Also, formation of nitrogen-vacancy clusters in silicon has been cited as the mechanism for suppression of boron TED.…”

Section: Co-implantationmentioning

confidence: 99%

Formation of Ultra-Shallow Junctions

Seebauer

Gorai

2011

Comprehensive Semiconductor Science and Technology

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“…2,3 Preamorphization of silicon was reported to be effective in suppressing channeling in Si. 6 For self-aligned silicidation devices, silicides are formed on source, drain, and gate regions simultaneously to ease the lithography requirements and to lower the contact resistance. N 1 implantation was introduced in an attempt to suppress both channeling and TED.…”

Section: Introductionmentioning

confidence: 99%

Formation of TiSi₂ on nitrogen ion implanted (001)Si

Cheng

Chen

Tsui³

1999

J. Mater. Res.

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Formation of TiSi 2 on nitrogen ion implanted (001)Si has been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BF 2 1 -20 keV N 2 1 and 30 keV As 1 -20 keV N 2 1 implanted samples, a continuous low-resistivity TiSi 2 layer was found to form in all samples annealed at 700-900 ± C. For Ti on 1 3 10 15 ͞cm 2 N 2 1 -and As 1 implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 ± C. The results indicated that with appropriate control, N 1 -implantation can be successfully implemented in forming low-resistivity TiSi 2 contacts on shallow junctions in deep submicron devices.

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Application of nitrogen implantation to ULSI

Cited by 25 publications

References 5 publications

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Formation of Ultra-Shallow Junctions

Formation of TiSi₂ on nitrogen ion implanted (001)Si

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Application of nitrogen implantation to ULSI

Cited by 25 publications

References 5 publications

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

Formation of Ultra-Shallow Junctions

Formation of TiSi2 on nitrogen ion implanted (001)Si

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Product

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Formation of TiSi₂ on nitrogen ion implanted (001)Si