Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells

Abstract

The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells (MQWs) structure, to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN, as well as to enhance the light output. The different self-assembled nano-masks were formed on InGaN by annealing thin Ni layers of different thicknesses. Whereafter, the InGaN films were etched into nano-patterned films. Compared with the green MQWs structure grown on untreated InGaN film, which on nano-patterned InGaN had better luminous performance. Among them the MQWs performed best when 3 nm thick Ni film was used as mask, because that optimally balanced the effects of nano-patterned InGaN on the crystal quality and the light output.

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

“…There are many ways to obtain 3D GaN surface structures. Beside the top-down method by etching polar GaN bulk materials to form periodic structures [14,15] , the current mainstream scheme is the bottom-up method by selective area growth (SAG) [16] . The first step is to grow polar GaN thin film on c-plane sapphire substrate, followed by a second step that SiO 2 or SiN x mask is deposited and 3D regrowth of GaN is encouraged to form specific surface structures.…”