Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates
Luming Yu,
Xun Wang,
Zhibiao Hao
et al.
Abstract:Growth of gallium nitride (GaN) inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets. In this work, GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates (PSS) by metal organic vapor phase epitaxy (MOVPE). The influences of growth conditions on the surface morphology are experimentally studied and explained by Wulff constructions. The competition of growth rate among {0001}, {
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