Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration

Abstract

The increase in gate leakage current and boron penetration are major problems for scaled gate dielectrics in advanced device technology. We have demonstrated, for the first time, reduction in gate leakage current and strong resistance to boron penetration when Jet Vapor Deposition (JVD) nitride is used as a gate dielectric in an advanced CMOS process. JVD nitride provides a robust interface and well behaved bulk properties, MOSFET characteristics, and ring oscillator performance.Process optimization and manufacturing issues remain to be addressed.

p-Type SiGe transistors with low gate leakage using SiN gate dielectric

“…To further suppress the tunneling current, high dielectric constant material, e.g., SiN , is an attractive candidate in place of ultrathin oxide. Ma [15] and Tseng et al [16] have demonstrated that JVD nitride with 3 nm equivalent-oxide-thickness (EOT) has 100 times lower leakage than thermal oxide with the same EOT on bulk Si CMOS, and the interface stability of JVD nitride compares favorably with thermal oxide. In this letter, for the first time, we report our results on the fabrication and characterization of p-type SiGe MOS-MODFET's with ultrathin JVD nitride gate dielectric.…”

Comparison of Electrical and Reliability Characteristics of Different Tunnel Oxides in SONOS Flash Memory

“…It is well known that the tunnel oxide degradation during FN (Fowler-Nordheim) stress is due to the oxide trap and interface trap generation [4]. Thus, a JVD silicon-nitride was studied to replace the dry tunnel oxide due to its higher dielectric constant and the low stress-induced leakage current (SILC) in recently years [5,6]. However, the interface between nitride/Si is not as good as the SiO 2 /Si interface and the Si-SiN barrier height is lower than that of Si-SiO 2 [6,7].…”