Application of Cw Beam Processing to Semiconductor Device Fabrication

Gibbons, J.F.; Lietoila, A.; Nissim, Y.I.; Wu, Fanzhengshu

doi:10.1016/b978-0-12-746850-1.50088-8

Laser and Electron Beam Processing of Materials 1980

DOI: 10.1016/b978-0-12-746850-1.50088-8

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Application of Cw Beam Processing to Semiconductor Device Fabrication

J.F. Gibbons¹,

A. Lietoila²,

Y.I. Nissim³

et al.

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1981

1983

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“…There is considerable current interest in the growth of silicon-on-insulator structures (Leamy 1982). Such dielectricaily isolated structures have applications in very large scale and very high speed integrated circuits (Gibbons 1981). Lasers (Lam et a1 1981), electron beams (Kamins and Vonltergen 1981), and incoherent radiation (Fan etal 1981) have been used to grow such structures.…”

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confidence: 99%

Electron and hole traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification

Banerjee¹,

Streetman²

1983

J. Phys. D: Appl. Phys.

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Electron and hole majority carrier traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification (LESS) have been measured by deep level transient spectroscopy. There is one dominant electron trap in these films at EC-0.57 eV and one dominant hole trap at Ev+0.29 eV. In each case the trap concentration in the recrystallised film is several orders of magnitude less than that in the deposited polysilicon film.

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mentioning

confidence: 99%

Electron and hole traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification

Banerjee¹,

Streetman²

1983

J. Phys. D: Appl. Phys.

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Pulse Electron Beam Annealing of Phosphorus-Implanted Silicon

Борисенко¹,

Лабунов²

1981

MRS Proc.

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Low-energy electron beam pulses of 0.2–0.8 s duration have been used to anneal silicon wafers implanted with 1.4×1015 P+/cm2 at 30 and 100 keV. Sheet resistivity, carrier concentration profiles and phosphorus atom distributions have been measured. It has been found that the impurity is completely activated without a noticeable diffusion at the energy density of 30 J/cm2 and higher. The annealing process appears to take place via a solid phase diffusion and annihilation of radiation defects.

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Application of Cw Beam Processing to Semiconductor Device Fabrication

Cited by 2 publications

References 4 publications

Electron and hole traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification

Electron and hole traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification

Pulse Electron Beam Annealing of Phosphorus-Implanted Silicon

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