Electron and hole traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification

Abstract

Electron and hole majority carrier traps in silicon-on-oxide grown using lateral epitaxy by seeded solidification (LESS) have been measured by deep level transient spectroscopy. There is one dominant electron trap in these films at EC-0.57 eV and one dominant hole trap at Ev+0.29 eV. In each case the trap concentration in the recrystallised film is several orders of magnitude less than that in the deposited polysilicon film.