Barrier layers as resonators on deep centers

Abstract

A model is proposed of barrier layer as resonator on deep centers, which permits a more precise definition of the deep-level transient spectroscopy (DLTS) mechanism. Experimental results are given for n ' -p diodes in Si, where the field dependence of relaxation time and apparent dependence of deep center density of DLTS are found. The disadvantages of DLTS theory are discussed.