Pulse Electron Beam Annealing of Phosphorus-Implanted Silicon

Abstract

Low-energy electron beam pulses of 0.2–0.8 s duration have been used to anneal silicon wafers implanted with 1.4×1015 P+/cm2 at 30 and 100 keV. Sheet resistivity, carrier concentration profiles and phosphorus atom distributions have been measured. It has been found that the impurity is completely activated without a noticeable diffusion at the energy density of 30 J/cm2 and higher. The annealing process appears to take place via a solid phase diffusion and annihilation of radiation defects.