Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed Crystals

Chang, I-Cheng; Mitra, S. S.

doi:10.1103/physrev.172.924

Cited by 473 publications

(187 citation statements)

References 18 publications

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“…1(d) ,N) , where m is the mass and l is the reduced mass. 31,32 In contrast, the phonon modes of In 0.15 Al 0.85 N were not observed when the sample was excited with the 473 nm line, as shown in Fig. 1(d) (ii and iii), which is ascribed to the reduced resonant excitation effect.…”

mentioning

confidence: 81%

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Tangi

Mishra

et al. 2017

Applied Physics Letters

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The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.

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mentioning

confidence: 81%

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Tangi

Mishra

et al. 2017

Applied Physics Letters

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“…For a mixed alloy AB x C 1-x , a simple criterion for predicting the mode behaviour has been proposed by I. F. Chang [27] , which are associated with disorder-activated longitudinal acoustic phonons (DALA), also seen in InAsSb ternary alloys [13], as well as a more prominent InSb-like LO peak. The InAs-like TO peak is forbidden in this geometry (since InAsSbP is a zinc blende structure), but is present in the spectra due to disorder.…”

Section: Resultsmentioning

confidence: 99%

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Cheetham¹,

Krier²,

Patel³

et al. 2011

J. Phys. D: Appl. Phys.

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The Raman spectra of quaternary InAs x Sb y P1−x−y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.

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“…In order to predict whether an alloy AxB1-xC will show one-or two-mode behaviour, the modified random element isodisplacement (MREI) model was proposed by Chang and Mitra [21,22]. According to the MREI model, for an alloy to exhibit two-mode behaviour, the following relationship must be fulfilled: AlN films with rocking curve widths as low as 12 arcsec [25] and bulk AlN [26].…”

Section: Resultsmentioning

confidence: 99%

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

Sédrine¹,

Žukauskaitė²,

Birch³

et al. 2015

J. Phys. D: Appl. Phys.

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YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. In this work we report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 ≤ x ≤ 0.22.The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E1(TO) and LO, and the Raman active E2 phonons are found to exhibit one-mode behaviour, which is discussed in the framework of the MREI model. The compositional dependencies of the E1(TO), E2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, ∞ , the static dielectric constant, 0 , and the Born effective charge ZB are established and discussed.

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Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed Crystals

Cited by 473 publications

References 18 publications

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

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Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed Crystals

Cited by 473 publications

References 18 publications

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE

Infrared dielectric functions and optical phonons of wurtzite YxAl1−xN (0 ⩽ x ⩽ 0.22)

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Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)