Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Abstract

The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.

Stacking effects in van der Waals heterostructures of blueP and Janus XYO (X = Ti, Zr, Hf: Y = S, Se) monolayers

“…In the case of the blueP- band alignment, signicant for designing light emitting diodes and laser devices. 66,67 Similar results are also observed in BP-BSe vdW heterostructures. 68 Generally, type-II band alignment facilitates the charge transfer, 69 therefore using the charge density difference (r ¼ r blueP-XYO À r blueP À r XYO ) for all three blueP-TiSO vdW stacking heterostructures (see Fig.…”

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

“…The furnace environment was kept at a pressure of 50 Torr with a carrier gas of argon (70 sccm). The furnace was heated up to 755 °C as a process temperature and kept for 15 [22]. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) was utilized by operating a probe-corrected FEI Titan at an acceleration voltage of 300 kV.…”

“…Thus the lattice matched InAlN substrates can be used for MoS 2 growth. To accomplish such lattice matched In x Al 1-x N thin films several kinetically controlled growth parameters were utilized having a prior idea of the growth conditions [21,22].…”

Engineering Band‐Type Alignment in CsPbBr3 Perovskite‐Based Artificial Multiple Quantum Wells

“…To understand the band alignment in each MQW structure, we measured the respective X-ray photoelectron spectra (XPS) (Figure 3). [28] First, we determined the core-level binding energy and valence-band maximum (VBM) of 50 nm-thick CsPbBr 3 (138.28 and 1.20 eV, respectively) (Figure S2a, Supporting Information). Next, we extracted the core-level binding energy and VBM values of 50 nm-thick TPBi (398.36 and 1.40 eV), Alq 3 (399.43 and 0.80 eV), and BCP (398.65 and 2.80 eV) by analyzing their XPS using Kraut's method as shown in Figure S2b-d (Supporting Information).…”