Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy

Enquist, P.M.; Wicks, G. W.; Eastman, L.F.; Hitzman, C. J.

doi:10.1063/1.335543

Cited by 113 publications

(25 citation statements)

References 13 publications

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“…In this way, the singly [5,9,10] and doubly [7,8,11] positively charged Ga interstitial point defects were used in kick-out models of Be diffusion in GaAs. Some authors have employed the neutral Ga selfinterstitials in their corresponding models [4,6].…”

Section: Resultsmentioning

confidence: 99%

“…From the studies of Be diffusion near the p-n junctions [6] as well as the concentration dependence of Be diffusivity [16,17] and also from the simulations [4,5,[9][10][11], the values of 0 [4,16] and +1 [5,6,[9][10][11]17] have been proposed for Be interstitial charge state.…”

Section: Resultsmentioning

confidence: 99%

“…Little previous work on the diffusion mechanisms of implanted Be in GaAs has been done [4,5] in comparison with investigations on the diffusion nature of grown-in Be into GaAs [6][7][8][9][10][11]. Nevertheless, the diffusion of Be in GaAs taking place during post-implanted annealing, under the used experimental conditions, has been explained with different forms of the kick-out mechanism.…”

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confidence: 98%

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Diffusion mechanism of implanted Be in GaAs

Koumetz¹,

Pesant

Dubois³

2008

Physica Status Solidi (b)

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The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post‐implant rapid thermal annealing in the temperature range of 700–900 °C for 60–240 s has been studied and successfully simulated by the kick‐out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self‐interstitials. Using the “plus one” approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi‐level and built‐in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of temperature, have been deduced from the fits of the experimental profiles obtained by the secondary ion mass spectrometry technique. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 98%

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Diffusion mechanism of implanted Be in GaAs

Koumetz¹,

Pesant

Dubois³

2008

Physica Status Solidi (b)

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“…Although the complex molecular structure of both Si 2 H 6 and Cp 2 Mg may suggest that gas-phase interactions could cause this transient-like dopant interaction, such an explanation appears unlikely since similar transientlike interactions have been reported between Si and Be (which are emitted from solid sources) in GaAs grown by molecular-beam epitaxy. 25 As an alternative explanation of such transient-like Mg (or Be) incorporation enhancement, one could imagine a surfactantlike region of Mg-rich Al 0.5 In 0.5 P on the surface of the growing film. An increase in the donor concentration within the film would then increase the solubility of the acceptor species, as explained elsewhere, 18,19 and this increased acceptor solubility could increase Mg incorporation from the near-surface region into the bulk region of the film.…”

Section: Mg-si Dopant Interactions In Al 05 In 05 Pmentioning

confidence: 99%

Donor-acceptor interactions in Al0.5In0.5P

Grillot

Stockman

Huang

et al. 2002

Journal of Elec Materi

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INTRODUCTIONWide-bandgap III-V semiconductors, such as Al 0.5 In 0.5 P, are technologically important due to their common use as carrier-confining layers in various devices, including (Al x Ga 1Ϫx ) 0.5 In 0.5 P laser diodes and light emitting diodes. 1,2 In order to more effectively optimize the performance of such devices, it is, therefore, important to develop a more complete understanding of both n-type and p-type doping of such wide-bandgap semiconductors. Thus, any growth parameters or impurity species that alter donor or acceptor incorporation or diffusion properties may have important implications on device design, and it is, therefore, important to thoroughly understand such effects. With regard to such properties, we have previously demonstrated that the deep donor, oxygen, enhances Mg incorporation in Al 0.5 In 0.5 P. 3 Similar to our previous observations regarding Mg-oxygen interactions in Al 0.5 In 0.5 P, various other research groups have reported that shallow-donor species, such as S or Si, have enhanced acceptor incorporation in III-V semiconductors. [4][5][6][7][8][9][10][11][12][13] In addition to enhancing acceptor incorporation, such shallow-donor species have also been shown to suppress acceptor diffusion in III-V semiconductors, 4-13 thus providing motivation to investigate the potential impact of the deep donor, oxygen, on Mg diffusion in Al 0.5 In 0.5 P. In addition to this investigation of Mg-oxygen dopant interactions in Al 0.5 In 0.5 P, we also consider donor-acceptor interactions between Mg and the shallow donors, Te, S, and Si, to allow the reader to more effectively compare our results on Mg-oxygen dopant interactions to previous reports on dopant interactions between shallow donors and Zn or Mg acceptors. To the best of our knowledge, this paper offers the first detailed study of donor-acceptor interactions in Al 0.5 In 0.5 P, and it is also the first report we are aware of that compares the effect of deep-donor species to those of shallow-donor species on acceptor incorporation and diffusion in III-V semiconductors.In addition to the potential effect of oxygen on Mg diffusion in Al 0.5 In 0.5 P, such investigations of Mgoxygen dopant interactions may have major consequences on the growth of Al-bearing compounds, such as Al x Ga 1Ϫx As, Al 0.5 In 0.5 P, and perhaps AlGaN as well, where unintentional oxygen incorporation is often a source of concern. For example, Mg is known Dopant interactions are considered between Mg-acceptor atoms and various donor species, including the deep donor; oxygen; and the shallow donors, Te, S, and Si, in Al 0.5 In 0.5 P. While each of these donor species is shown to suppress Mg diffusion and enhance Mg incorporation in Al 0.5 In 0.5 P, careful analysis of the concentration profiles for these various donor species reveals subtle differences in the shape of the donor and acceptor dopant profiles, suggesting subtle differences in both the type of donor-acceptor interactions involved and in the effectiveness of the various donor species at suppressing Mg ...

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“…MBE growth in producing highly super-saturated semiconductor structures. According to earlier studies [10][11][12][13][14], Be atoms tend to occupy interstitial sites and diffuse towards the surface or the substrate when a high concentration of Be atoms were doped. In the present study, we investigated how the concentrations of acceptor Be changed with the growth temperature and the growth rate in order to clarify the microscopic processes which determined their maximum concentrations in the low-temperature growth.…”

Section: Introductionmentioning

confidence: 98%