Anomalous hybridization in the In-rich InAs(001) reconstruction

Feldwinn, Darby L.; Clemens, Jonathon B.; Shen, Jian; Bishop, Sarah R.; Grassman, Tyler J.; Kummel, Andrew C.; Droopad, R.; Passlack, M.

doi:10.1016/j.susc.2009.09.026

Cited by 31 publications

(23 citation statements)

References 30 publications

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“…Arsenic capped wafers are directly ͑Park Scientific system͒ or radiatively ͑Omicron system͒ heated to get ͑4 ϫ 2͒ surface in the UHV preparation chamber. 14,25 After the ͑4 ϫ 2͒ surface reconstruction is verified by LEED, the sample is transferred to the STM chamber without breaking the vacuum.…”

Section: Experimental and Computational Methodsmentioning

confidence: 99%

“…This structure has undimerized row atoms and highly buckled group III dimers in the trough, not observed experimentally probably due to defects and limited terrace size; however, it is employed as the reference state since the lowest energy structure must be used for all thermodynamic calculations of chemisorption binding energy. 14,25 Figure 1 shows filled state VT-STM and empty state STM images of the In-rich InAs͑001͒-͑4 ϫ 2͒ clean surface along with a structure model illustrating the surface reconstruction. The InAs͑001͒-͑4 ϫ 2͒ surface consists of top In rows separated by 17 Å.…”

Section: Experimental and Computational Methodsmentioning

confidence: 99%

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Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Shen

Chagarov

Feldwinn

et al. 2010

The Journal of Chemical Physics

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Interfacial bonding geometry and electronic structures of In(2)O on InAs and In(0.53)Ga(0.47)As(001)-(4×2) have been investigated by scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS). STM images show that the In(2)O forms an ordered monolayer on both InAs and InGaAs surfaces. In(2)O deposition on the InAs(001)-(4×2) surface does not displace any surface atoms during both room temperature deposition and postdeposition annealing. Oxygen atoms from In(2)O molecules bond with trough In/Ga atoms on the surface to form a new layer of O-In/Ga bonds, which restore many of the strained trough In/Ga atoms into more bulklike tetrahedral sp(3) bonding environments. STS reveals that for both p-type and n-type clean In(0.53)Ga(0.47)As(001)-(4×2) surfaces, the Fermi level resides near the valence band maximum (VBM); however, after In(2)O deposition and postdeposition annealings, the Fermi level position is close to the VBM for p-type samples and close to the conduction band minimum for n-type samples. This result indicates that In(2)O bonding eliminates surface states within the bandgap and forms an unpinned interface when bonding with In(0.53)Ga(0.47)As/InP(001)-(4×2). Density function theory is used to confirm the experimental finding.

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Section: Experimental and Computational Methodsmentioning

confidence: 99%

Section: Experimental and Computational Methodsmentioning

confidence: 99%

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Shen

Chagarov

Feldwinn

et al. 2010

The Journal of Chemical Physics

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“…35 Figure 4 illustrates possible bonding models for the clean and TMA dosed surfaces for both the 4 × 2 and 2 × 4 reconstructions. One model of the clean 4 × 2 contains a In/Ga row with In/Ga-dimers in the trough, 28,36 Figure 4(a). The TMA dosed and annealed below 190 • C induce a surface reconstruction that rotates the row order 90 • with 0.8 nm row spacing, 22 shown in Figure 4(b).…”

Section: Stm Of Tma On In/ga-rich Ingaas(001)-(4 × 2) and As-rich Ingmentioning

confidence: 99%

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2

Melitz

Kent

Kummel

et al. 2012

The Journal of Chemical Physics

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Formation of a contaminant free, flat, electrically passive interface to a gate oxide such as a-Al(2)O(3) is the critical step in fabricating III-V metal oxide semiconductor field effect transistors; while the bulk oxide is amorphous, the interface may need to be ordered to prevent electrical defect formation. A two temperature in situ cleaning process is shown to produce a clean, flat group III or group V rich InGaAs surface. The dependence of initial surface reconstruction and dosing temperature of the seeding of aluminum with trimethylaluminum dosing is observed to produce an ordered unpinned passivation layer on InGaAs(001)-(4 × 2) surface at sample temperatures below 190 °C. Conversely, the InGaAs(001)-(2 × 4) surface is shown to generate an unpinned passivation layer with a seeding temperature up to 280 °C. For both reconstructions, the chemical drive force is consistent with formation of As-Al-As bonds. The optimal seed layer protects the surface from background contamination.

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“…The ͑4 ϫ 2͒ surface reconstructions of each semiconductor are almost identical. 11 The InAs surface was exposed to HPLCgrade H 2 O vapor at 10-100 mTorr and 25°C for 1 to 2 min, …”

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confidence: 99%

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Shin

Clemens

Kelly

et al. 2010

Applied Physics Letters

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Anomalous hybridization in the In-rich InAs(001) reconstruction

Cited by 31 publications

References 30 publications

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

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