Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

Oh, Seung June; Yang, Bong Seob; Kim, Yoon Jang; Oh, Min Seok; Jang, Mi; Yang, Hoichang; Jeong, Jae Kyeong; Hwang, Cheol Seong; Kim, Hyeong Joon

doi:10.1063/1.4748884

Cited by 40 publications

(38 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…53 In addition, the gate field-driven migration of V 2þ O through the grain boundary defects in a polycrystalline In-Zn-O (IZO) channel region toward the gate insulator/channel layer further deteriorated the NBIS instability of the resulting IZO TFTs. 54 This suggests that a grain boundary-less structure is favored in terms of NBIS stability, given that the channel composition is identical. Recently, it was suggested that the NBIS instability originates from the creation of a bulk double donor with a shallow singly ionized [V þ O ] as well as the formation of deep double ionized [V 2þ O ], which was inferred through rigorous analysis of the current-voltage and capacitancevoltage characteristics of a-IGZO TFTs with different channel thickness.…”

Section: Carrier Trapping or Injection Modelmentioning

confidence: 98%

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

2013

View full text Add to dashboard Cite

Metal oxide optoelectronics is an emerging field that exploits the intriguing properties of the ns orbital-derived isotropic band structure as a replacement for traditional silicon-based electronics in advanced active-matrix information displays. Although the device performance of metal oxide thin film transistors (TFTs) has been substantially improved, the device reliability against external light and gate bias stress remains a critical issue. This paper provides a literature review of light-induced gate bias stress instability in metal oxide TFTs and explain the importance of photo-bias instability in the applications of metal oxide TFTs to optoelectronic device. The rationale of threshold voltage (V th ) instability under the negative bias illumination stress (NBIS) condition is discussed in detail. The charge trapping/injection model, oxygen vacancy photoionization model, and ambient interaction model are described as plausible degradation mechanisms. Finally, the possible approaches to prevent NBIS-induced V th instability are proposed based on an understanding of the NBIS instability.

show abstract

Section: Carrier Trapping or Injection Modelmentioning

confidence: 98%

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

2013

View full text Add to dashboard Cite

show abstract

“…Recently, InO x -based amorphous oxide semiconductors such as In 2 O 3 , 7,8 InZnO, 9,10 Sn-InZnO, 11 Hf-InZnO, 12,13 Si-InZnO, 3,14 Zr-InZnO, 15,16 InGaZnO (IGZO), 17 InWO, 18 and InSiO 19,20 have been investigated in low-temperature processes to improve device performance. Because Zn-containing oxide semiconductors are sensitive to moisture in the atmosphere, 21 a ZnO-based TFT that is fabricated at a low temperature is difficult to use in stable operation.…”

mentioning

confidence: 99%

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

et al. 2014

View full text Add to dashboard Cite

“…In particular, the undercoordinated In atoms are most influential in lowering the conduction band, and this is consistent with the experimental finding that In-rich compounds are more prone to the instability problem. 37,38 Next, we calculate the optical spectrum. The optical absorption coefficient (α) at the photon energy of E ph is given as follows:…”

Section: We Fit Dos Near the Band Edges Using The Form Of D V(c) (E)mentioning

confidence: 99%

Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

Kang¹,

Song²,

Nahm³

et al. 2014

APL Materials

View full text Add to dashboard Cite

To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO4 is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO4 with the optical gap of 3.6 eV, the amorphous InGaZnO4 has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ∼0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.

show abstract

Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

Cited by 40 publications

References 30 publications

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

Contact Info

Product

Resources

About