Annealing temperature dependent structural and optical properties of electrodeposited CdSe thin films

Mahato, Somnath; Shakti, Nanda; Kar, Asit Kumar

doi:10.1016/j.mssp.2015.06.019

Cited by 29 publications

(4 citation statements)

References 24 publications

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“…It has been investigated that chemically deposited CdSe films show cubic, hexagonal, or mixed (cubic + hexagonal) crystal structures, depending upon the deposition conditions [20]. CdSe thin films grown by CBD [21] were reported to have a cubic structure, while the electrodeposition method [22] produced a hexagonal structure. In addition, it has been reported that the same deposition method could exhibit different (amorphous/hexagonal) structures [13,23].…”

Section: Xrd Analysismentioning

confidence: 99%

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

et al. 2021

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Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm−3. The band gap in the range of 1.65–1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300 °C has the potential to be used as a window layer in solar cells.

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Section: Xrd Analysismentioning

confidence: 99%

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

et al. 2021

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“…The RF sputtering process is renowned for its ability to provide uniform film deposition without ion damage over a large area [10,11]. Moreover, the performance of CdSe thin films can be optimized by altering the properties concerned for an absorber or window layer using chloride treatment [12]. Chloride treatment is widely established as a spectacular step, which can be performed by a wet or dry process, using chloride compounds such as CdCl 2 , MgCl 2 , and InCl 3 [13,14].…”

Section: Introductionmentioning

confidence: 99%

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

et al. 2023

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The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 × 10−3 to 4.0 × 10−3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment.

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“…CdSe is a classic semiconductor with a direct band gap of 1.69 eV which has little size mismatch with CdTe and therefore has a high solubility in CdTe. 11,12 In recent years, using CdSe as the window layer in CdTe solar cells has been reported. Paudel et al 3 reported that the spectral response can be enhanced in short wavelength regions by using CdSe lm instead of CdS as the CdTe solar cell window layer.…”

Section: Introductionmentioning

confidence: 99%

First-principles investigation on the electronic structures of CdSe_xS_1−x and simulation of CdTe solar cell with a CdSe_xS_1−x window layer by SCAPS

et al. 2022

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Annealing temperature dependent structural and optical properties of electrodeposited CdSe thin films

Cited by 29 publications

References 24 publications

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

First-principles investigation on the electronic structures of CdSe_xS_1−x and simulation of CdTe solar cell with a CdSe_xS_1−x window layer by SCAPS

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Annealing temperature dependent structural and optical properties of electrodeposited CdSe thin films

Cited by 29 publications

References 24 publications

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

First-principles investigation on the electronic structures of CdSexS1−x and simulation of CdTe solar cell with a CdSexS1−x window layer by SCAPS

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First-principles investigation on the electronic structures of CdSe_xS_1−x and simulation of CdTe solar cell with a CdSe_xS_1−x window layer by SCAPS