Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters

Ershov, A. V.; Tetelbaum, D. I.; Chugrov, I. A.; Машин, А. И.; Mikhaylov, A. N.; Нежданов, А. В.; Ershov, A. A.; Karabanova, I. A.

doi:10.1134/s1063782611060108

Cited by 20 publications

(5 citation statements)

References 23 publications

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“…Amorphous SiO

_{x}

/SiO

_{2}

multilayers were deposited on a p‐type crystalline Si (100) substrate by alternate vacuum evaporation of the corresponding initial materials, in accordance with the procedure used in (). The SiO

_{x}

layers were produced by evaporation of SiO powder in a tantalum Knudsen effusion cell, while the SiO

_{2}

layers were formed by electron‐beam evaporation of fused quartz.…”

Section: Experimental Methodsmentioning

confidence: 99%

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Vaccaro

Spallino

Zatsepin

et al. 2014

Physica Status Solidi (b)

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Time‐resolved photoluminescence from Si nanocrystals produced by 1100∘C thermal annealing of SiOx/SiO2 multilayers were investigated by tunable laser excitation, achieving a detailed excitation/emission pattern in the visible and UV range. The emission lineshape is a gaussian curve inhomogenously broadened because of the size distribution of Si nanocrystals, the excitation spectrum consists of the overlap of two gaussian bands centered around 3.4 and 5.1 eV. The mapping of luminescence spectral components with the lifetime points out the energy cubic dependence of the spontaneous emission rate. These findings are interpreted on the basis of models proposed in literature that associate this luminescence with quantum confinement of excitons or interfacial Si/SiO2 defects.

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“…Amorphous SiO

_{x}

/SiO

_{2}

multilayers were deposited on a p‐type crystalline Si (100) substrate by alternate vacuum evaporation of the corresponding initial materials, in accordance with the procedure used in (). The SiO

_{x}

layers were produced by evaporation of SiO powder in a tantalum Knudsen effusion cell, while the SiO

_{2}

layers were formed by electron‐beam evaporation of fused quartz.…”

Section: Experimental Methodsmentioning

confidence: 99%

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Vaccaro

Spallino

Zatsepin

et al. 2014

Physica Status Solidi (b)

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“…The prepared structures contain silicon nanocrystals with average size of 2.5 and 3.5 nm, in keeping with by the thickness of the deposited a‐SiO

_{x}

layers. Measurements by means of high performance transmission electron microscopy , have shown the coincidence of the average size of the silicon nanocrystals with the thickness of the initial a‐SiO

_{x}

layer.…”

Section: Methodsmentioning

confidence: 99%

“…The layers were deposited on the silicon substrate at temperature 200

^{\circ}

C according to procedure described in Refs. . The structures were distinguished by the thickness of the layers of silicon suboxide .…”

Section: Methodsmentioning

confidence: 99%

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Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Andreev

Yablonskiy

Krasilnik

et al. 2016

Physica Status Solidi (b)

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The intensive photoluminescence (PL) band corresponding to the self‐trapped excitons (STEs) at surface Si–Si dimers has been observed for the multilayer periodical nanostructures (SiO2/nc‐Si/) with average nanocrystal size of 2.5 and 3.5 nm. The maximum of the band is located at 1.06 μm (1.17 eV) and does not depend on the nanocrystal size. The decay times of the PL band are 5.9 and 5.3 ms for the nanocrystal size of 2.5 and 3.5 nm, correspondingly. The obtained experimental results give a direct evidence of the exciton self‐trapping on the silicon nanocrystals surface predicted by G. Allan, C. Delerue, and M. Lannoo [Phys. Rev. B 76, 2961 (1996)].

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“…The possibility of thin‐layer formation with well‐expressed photoluminescence in the framework of silicon technologies is of great interest for technologists and researchers working on SiO 2 films containing silicon nanoparticles. The redundant silicon in the silicon dioxide matrix can be obtained by annealing the SiO x films formed from SiO powder . Under high‐temperature annealing of these films, SiO x decomposition to Si + SiO 2 should take place with the simultaneous self‐organization of silicon atoms in nanoclusters and/or nanocrystals.…”

Section: Introductionmentioning

confidence: 98%

Synchrotron investigation of the multilayer nanoperiodical Al₂O₃/SiO/Al₂O₃/SiO…Si structure formation

Turishchev

Терехов

Koyuda

et al. 2012

Surface & Interface Analysis

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The results of a multilayered nanoperiodical structures (MNS; Al 2 O 3 /SiO/Al 2 O 3 /SiO. . .Si) investigation using X-ray absorption nearedge structure (XANES) spectroscopy technique are presented. XANES spectra were obtained using synchrotron radiation. Possible silicon nanocluster formations are shown on the surface layers of the MNS under high-temperature annealing. At the same time, possible aluminum silicate formation is shown. The phenomenon of absorption spectra intensity inversion is demonstrated in the results of the interaction between synchrotron radiation and MNS.

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Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters

Cited by 20 publications

References 23 publications

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Synchrotron investigation of the multilayer nanoperiodical Al₂O₃/SiO/Al₂O₃/SiO…Si structure formation

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Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters

Cited by 20 publications

References 23 publications

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence

Synchrotron investigation of the multilayer nanoperiodical Al2O3/SiO/Al2O3/SiO…Si structure formation

Contact Info

Product

Resources

About

Synchrotron investigation of the multilayer nanoperiodical Al₂O₃/SiO/Al₂O₃/SiO…Si structure formation