Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

“…Most likely this is the result of the effects of annealing on the quality of the AlGaAs barrier material. Studies of the effects of annealing on the defect density of AlGaAs and GaAs conclude that annealing can significantly reduce the concentration of certain types of point defects [11][12][13].…”

Semiconductors for terahertz photonics applications

“…Such a comparison is an important proof for the point defect model of the carrier recombination in the LTG GaAs because the As precipitates (present only in the annealed layers) cannot account for the observed ultrafast carrier dynamics in the as-grown LTG GaAs. Moreover, it has been argued in [70] that even in the annealed layers, where both As precipitates and As antisites are present, the electron trapping cross-section of the latter is larger than that of the former.…”

Defect Engineering in Impurity-Free Disordered (Al)GaAs for Optoelectronic Devices Application

“…Finally, As-clusters could be expected to exhibit Coulombic charging, and hence, to display electric-field-dependent electron emission kinetics similar to S1. Indeed, the negative decay of OTC signal in Ref [41] has been explained by the charging and discharging of As-clusters. Since the formation of As Ga in the near-surface region of IFD n-GaAs is energetically favorable under a Electric Field : F (X 10 6 V cm compressive stress, together with the fact that the enthalpy of agglomeration of antisites into Asclusters is lowered in the presence of V Ga , suggests that S1 is likely to be a complex or clusters involving As Ga .…”

“…It is not unreasonable that S1 is related to small As inclusions or clusters. For instance, a previous study of annealed low-temperature-grown GaAs by optical transient current (OTC) spectroscopy has shown that a defect with energy level between 0.23 -0.27 eV, which overlaps with the energy position of S1, could be attributed to small As-clusters [41]. In addition, it has recently been shown that the stability of As-clusters, formed by the agglomeration of As Ga , was enhanced in the presence of V Ga [42].…”