Annealing effects on physical properties of doped CdTe thin films for photovoltaic applications

Tariq, Ghulam Hasnain; Anis-ur-Rehman, M.

doi:10.1016/j.mssp.2014.09.012

Cited by 22 publications

(12 citation statements)

References 23 publications

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“…It was found that higher process temperatures in the range 430–470 °C led to larger grain size as has been reported [ 14,15 ] from other studies on SnS. It has also been reported [ 16 ] that temperatures of 500 °C and above leads to the decomposition of SnS. A previous study by the authors [ 6 ], employing tetramethyltin (TMT) as the Sn source, employed growth temperatures up to 550 °C due to the thermal stability of the Sn precursor.…”

Section: Resultssupporting

confidence: 76%

One-step growth of thin film SnS with large grains using MOCVD

Clayton

Charbonneau

Siderfin

et al. 2018

Science and Technology of Advanced Materials

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Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin–doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430–470 °C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn2S3 was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn2S3 was deduced to have resulted for all growth conditions.

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Section: Resultssupporting

confidence: 76%

One-step growth of thin film SnS with large grains using MOCVD

Clayton

Charbonneau

Siderfin

et al. 2018

Science and Technology of Advanced Materials

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“…But the introducing of these special materials not only raise the cost issues because of their complex preparation process, but also bring more uncontrollable parameters into the continuous production of high-performance CdTe thin film solar cells. For example, efforts have been devoted to introducing Cu into CdTe layer to form Ohmic back contact for improving the cell performance. − However, the diffusion degree of Cu strongly depends on the deposition thickness of Cu thin film, the annealing temperature and the annealing time. Excessive amount of free Cu always diffuse through CdTe layer into the underlying CdS layer, which results in a “roll-over” phenomena of J-V curve and greatly reduces the cell performance. , In one word, development of novel back electrode, especially p-type conductive semiconductor with a good Ohmic contact, is essential for the improvement of the cell performance in thin film solar cells.…”

mentioning

confidence: 99%

Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells

et al. 2016

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Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

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“…Thin films of SnS are suitable for various devices such as photo-detectors, infrared detectors, sensing devices and solar cells fabrication [5]. It is an ideal candidate for making costeffective solar cells having exhibited good optical properties, excellent band gap range of 1.3 to 1.5 eV, high absorption coefficient (~10 5 cm -1 ), good carrier concentrations and hole mobility (0.8 -15.3 cm 2 V -1 S -1 ) [6][7][8]. Besides these properties, theoretical calculations have indicated a realistic conversion efficiency of above 25 % for SnS-based heterojunction solar cells [6].…”

Section: Introductionmentioning

confidence: 99%

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

Damisa

Emegha

2021

Trends Sci

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The effects of deposition cycles on the structural and optical properties of lead tin sulphide (PbSnS) thin films have been described. Successive ionic layer adsorption and reaction (SILAR) method was used to deposit the ternary material on soda-lime substrates. In the present work, the PbSnS films were grown using lead nitrate, tin chloride dehydrate and thioacetamide solutions as sources of Pb, Sn and S, respectively. XRD measurements revealed that the deposited films were polycrystalline in nature with strong adherent to the substrates. The transmittance was found to be high in the near infrared regions of the electromagnetic radiation and, also increased with deposition cycles. The band gap energy was found to vary from 1.70 to 1.75 eV for 10 and 35 deposition cycles. The study indicates that SILAR is an excellent method in depositing good quality films for device applications. HIGHLIGHTS SILAR is an excellent technique for depositing thin films of lead tin sulphide (PbSnS) Deposition cycles influences the XRD and optical properties of PbSnS thin films PbSnS thin films are useful for solar cell fabrications The band gaps of the PbSnS varies from 1.70 to 1.75 eV with deposition cycles

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Annealing effects on physical properties of doped CdTe thin films for photovoltaic applications

Cited by 22 publications

References 23 publications

One-step growth of thin film SnS with large grains using MOCVD

One-step growth of thin film SnS with large grains using MOCVD

Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

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