Annealing effect for surface morphology and luminescence of ZnO film on silicon

RETRACTED: Dependence of the structural and optical properties of ZnO thin films on the substrate temperature in atomic layer deposition and post-annealing

“…No ultraviolet (UV) light emission peak is observed for the as-grown ZnO thin film and the one annealed at 400 • C. It is evident that the intensity of UV emission increases and that the full width at half maximum (FWHM) of the UV emission peak decreases as the annealing temperature increases. The intensity of the green band emission also seems to decrease and the green band emission peak is not nearly observed at 800 and 1000 • C. Annealing at a very high temperature above 800 • C rather deteriorates the PL property of the ZnO thin films [16]. Nevertheless, such negative effect is not found in the PL spectra for the ZnO thin films annealed at 800 and 1000 • C in this work.…”

Structural property of polycrystalline silicon films on aluminum-doped zinc oxide-coated glass

“…The critical RTA crystallization temperature for a-Si film on AZO-coated glass is the same as that for a-Si film on bare glass, as reported in our previous work [27]. Moreover, the situation of Zn 2 SiO 4 new phase formation for the a-Si/ZnO film subjected to high temperature is in accordance with previous results, while the critical temperature (900 1C) herein is slightly higher compared with that in other reports [28,29], which is supposed to be due to the difference in the initial state. The appearance of Zn 2 SiO 4 phase may influence the Si films and Si-based thin-film solar cell property, further investigation is needed to clarify the relation.…”

Effect of ZnO buffer layer on the cathodoluminescence of ZnGa2O4/ZnO phosphor screen for FED

“…These mechanisms always compete due to energy transfer depending on the quality of the crystal; meanwhile, the intensity and position as well as the FWHM of emission are different, which also relied on the annealing temperature [10][11][12]. Fig.…”