RETRACTED: Dependence of the structural and optical properties of ZnO thin films on the substrate temperature in atomic layer deposition and post-annealing

Lim, Jong Min; Lee, Chongmu

doi:10.1016/j.jallcom.2006.02.102

Cited by 10 publications

(5 citation statements)

References 16 publications

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“…It has been reported that the crystallinity of ZnO thin films can also be improved by carrying out postannealing treatment: indium-doped ZnO thin films were deposited at a high temperature of 800°C to improve their crystal quality and were annealed for a short time of only 3 min; sufficient time to activate the dopants and to move the equilibrium condition. 5,13 The intensity of the ͑008͒ peak was stronger than the other peaks and increased with decreasing indium mol ratios, whereas the nc-InGaO 3 ͑ZnO͒ 2 film with In:Ga:Zn ͑3:1:2͒ exhibited a higher ͑100͒ peak intensity compared to the other films as seen in Fig. 4b.…”

Section: Resultsmentioning

confidence: 86%

“…Further, these authors observed that the grain size of the ZnO film tended to increase and the grain shape tended to change from a worm-like longish shape to a round one as the annealed temperature increases from 600 to 1000°C. 13 It has also been reported that nano-or submicron In 2 O 3 particles fabricated using indium nitrate solution can be synthesized with oval, stick, and cubic shape controlled by solution aging temperature and time. 14 Figure 4 shows the XRD patterns of the nc-InGaO 3 ͑ZnO͒ 2 phase informed in JCPDF # 40-0252.…”

Section: Resultsmentioning

confidence: 99%

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Growth of Transparent nc-InGaO[sub 3](ZnO)[sub 2] Thin Films with Indium mol Ratios Using Solution Process

Kim

Shin

et al. 2008

J. Electrochem. Soc.

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The effect of indium mol ratio on nanocrystalline ͑nc͒-InGaO 3 ͑ZnO͒ 2 thin films prepared by solution was investigated with structural properties. The size of nanocrystallines tended to increase up to 120 nm with an optimized indium mol ratio after second postannealing at 700°C for 10 s with three cycles. The shape of the nanocrystallines and their growth were determined by the indium mol ratio. The main ͑008͒ growth direction, which had a columnar structure, could be retarded by a high indium mol ratio, which could generate the ͑100͒ direction growth. After postannealing, the films had with less oxygen deficiency and main stoichometric oxygen bound with metal ͑In, Ga, and Zn͒. The growth of nanocrystallines during the second postannealing from small grains with random orientation to large grains with well-aligned orientation could be explained by a self-solid phase reaction with decomposition and combination of precursor without any additional epitaxial layer. It implied that the crystallinity of nc-InGaO 3 ͑ZnO͒ 2 thin films was strongly dependent on process parameters such as temperature and component mol ratio.High performance oxide semiconductor thin films have been the significant attention for the large area device application of the information display, solar cells, and sensor, due to electrical and optical properties. 1 Usually, most oxide semiconductors need a high deposition temperature and postannealing treatment in ambient air or oxygen to improve their electrical and optical properties. 2-4 For example, ZnO thin films are typically deposited at comparatively low temperature and postannealed at high temperatures to relax the intrinsic defects and stress. 5 The indium doped ZnO thin films deposited at relatively high temperatures are used to fabricate high quality films. 5 Control of the size, shape, and crystal structure of nanocrystal oxide materials is an important parameter for improving performance of the thin films due to their unique size-and shapedependent characteristics. 6,7 The optical and electrical properties of InGaZnO thin films with different gallium/indium ratio deposited by the sputtering method has been reported. 8 With increasing indium content and a fixed gallium content, there is no significant difference in the refractive index in the transparent range, whereas the refractive index is clearly reduced in the opaque range. Further, the turn-on voltage of InGaZnO thin film transistor increases with increasing gallium/indium ratio. 8 Also, the mobility is largely influenced by the indium composition and carrier concentration is controlled by the amount of gallium. 1 However, the effect of the indium component on structure properties has rarely been investigated for the growth of In-Ga-Zn oxide semiconductors.In this paper, we fabricate nc-InGaO 3 ͑ZnO͒ 2 thin films using a sol-gel process with two-step postannealing to improve crystallinity. The effects of different indium mol ratios on structural properties, including the lattice mismatch, the shape of nanocrystallines, and self-s...

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Section: Resultsmentioning

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Growth of Transparent nc-InGaO[sub 3](ZnO)[sub 2] Thin Films with Indium mol Ratios Using Solution Process

Kim

Shin

et al. 2008

J. Electrochem. Soc.

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“…Meanwhile, since the sputtering is universal and controllable in industrial fields, some groups including us tend to focused on the growth of Mg x Zn 1−x O films by sputtering [9,10]. To improve the quality of Mg x Zn 1−x O films, some assistant methods including thermal annealing have been introduced, and the quality of ZnO films have been improved in some papers [8,9,11]. Hence, after we optimized the technical parameters to modulate the Mg content in films [10], it is necessary to deal with Mg x Zn 1−x O films by the post-annealing.…”

Section: Introductionmentioning

confidence: 99%

The effects of thermal annealing on properties of MgxZn1−xO films by sputtering

Zhang

Pan

et al. 2009

Journal of Alloys and Compounds

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“…Several preparation methods are used to grow high-quality ZnO thin films at relatively low temperatures(>700 °C). This includes pulsed laser deposition, dc reactive magnetron sputtering, atomic layered position, sol-gel spin coating, RF magnetron sputtering, metal-organic chemical vapor deposition, and chemical spray pyrolysis [1,[4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of doping with cobalt on the structure and optical properties of zinc oxide thin films prepared by sol-gel method

Khamis,

Degig,

Allaham

et al. 2024

Phys. Scr.

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In this study, pure zinc oxide films doped with cobalt percentage of 3% were prepared using Sol- spin coating technique on glass substrate at a temperature of 100 degrees Celsius. The structural and optical properties of these films have been studied. Structure properties are obtained by using X-ray diffraction (XRD) technique, they were carried out using a device of type (Panalytical X 'Pert pro) with a target of type (Cu Kα) and a wavelength of (λ = 1.541 Ao). The diagnostic results showed that these films are polycrystalline and have a hexagonal structure with preferential orientation at 101. The Optical properties are concluded from absorption and transmission measurements, which are obtained by using double beam UV- Visible1800 spectrophotometer in the wavelength (300-800) nm. It was found that the absorbance increases with increasing the doping percentage (0.01, 0.02, 0.03 and 0.04) mol%, while the transmittance is decreased. The optical properties also included the energy gap, the absorption coefficient, the reflectivity, the refractive index, the extinction coefficient, and the dielectric constant in its real and imaginary parts. It was found that the energy gap values decreased in the range 3.32 – 3.03 and the transmittance rate was 90% within the visible spectrum region.

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RETRACTED: Dependence of the structural and optical properties of ZnO thin films on the substrate temperature in atomic layer deposition and post-annealing

Cited by 10 publications

References 16 publications

Growth of Transparent nc-InGaO[sub 3](ZnO)[sub 2] Thin Films with Indium mol Ratios Using Solution Process

Growth of Transparent nc-InGaO[sub 3](ZnO)[sub 2] Thin Films with Indium mol Ratios Using Solution Process

The effects of thermal annealing on properties of MgxZn1−xO films by sputtering

Effect of doping with cobalt on the structure and optical properties of zinc oxide thin films prepared by sol-gel method

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