Effect of ZnO buffer layer on the cathodoluminescence of ZnGa2O4/ZnO phosphor screen for FED

Magneto-optical FeGa2O4 nanoparticles as dual-modality high contrast efficacy T2 imaging and cathodoluminescent agents

“…In particular, ZnGa 2 O 4 is considered a promising luminescence oxide material as a cathodoluminescence phosphor in flat-panel displays. 17 In this work, we report the first example of spinel-structured FeGa 2 O 4 nanoparticles, without an added dopant, that act as bi-functional T 2 magnetic resonance imaging and cathodoluminescent agents. A solution approach synthesis involving FeCl 2 , urea, and amorphous GaOOH solution 20 was used to create water-dispersed FeGa 2 O 4 nanoparticles.…”

“…A solid-state reaction at high temperature (B1000 K) has been used to prepare bulk FeGa 2 O 4 materials. 15 Recently fabricated spinel-structured ZnGa 2 O 4 17,18 and NiGa 2 O 4 19 nanomaterials showed a potential for use in phosphors and photocatalysis. In particular, ZnGa 2 O 4 is considered a promising luminescence oxide material as a cathodoluminescence phosphor in flat-panel displays.…”

“…The well-studied ZnGa 2 O 4 blue phosphor displays cathodoluminescence emission ranging from UV to visible wavelength; 17,18,[28][29][30][31] these colors are related to the existence of oxygen vacancies, 18,28 self-activated optical centers of Ga 3+ at octahedral and tetrahedral sites, 28 a ratio of Ga 3+ /Zn 2+ , 30 and impurity dopants. 31 The UV luminescence (360 nm) of ZnGa 2 O 4 is thought to originate from Ga 3+ at the A sites of the spinel structure 29 or to increase the ionicity of O 2À to metal leading to oxygen vacancies.…”

Heteroepitaxial (111) ZnGa2O4 Thin Films Grown on (00.1) Sapphire by Pulsed Laser Deposition

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Thin films of spinel cubic ZnGa 2 O 4 have been widely investigated as a deep ultraviolet (UV) excited phosphor for potential applications in low-voltage field emission displays, electroluminescent devices, and vacuum fluorescent displays since the 1990s. [1][2][3][4][5][6][7][8][9][10][11][12][13] Recently, ZnGa 2 O 4 thin films have attracted intensive interest for potential wide-bandgap oxides device applications in luminescence, transistors, and sensors. [14][15][16][17][18][19][20][21][22][23][24][25] High-quality stoichiometric or near-stoichiometric ZnGa 2 O 4 epitaxial thin films, with low average density of crystalline defects, would be a preferable platform to study the fundamentals of physical and chemical properties of this material in view of potential device applications.

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