Annealing Behavior of Oxygen‐Bound Exciton in Electron‐Irradiated ZnTe

Abstract

(a), T. TAGUCHI (a), and S. FUJITA (b) Oxygen in ZnTe is recognized as one of the isoelectronic impurities capable of forming a bound-exciton state. As ZnTe has been subjected to the incorporation /1, 2/, o r contamination /3/ by oxygen impurities during its preparation, a characteristic emission band is often observed at about 1.9 eV at 4.2 K (as shown in the insert to Fig. 1) which is the so-called oxygen-bound-exciton (OBE) luminescence, having associated with it many LO-and TA-phonon side-bands. 2It is our objective in this paper to show the effect of electron irradiation on the doublet spectra in the OBE luminescence, in which one can expect to introduce particular types of strain field due to the radiation-induced defects, in particular the Zn vacancy. We have found an annealing stage centred at about 100 O C for the recovery of the doublet intensities in the OBE luminescence, suggesting the possibility of long-range migration of Zn vacancy.1) Suita, Osaka 565, Japan.2 ) Yoshida, Kyoto 616, Japan.

Sulfur forming an isoelectronic center in zinc telluride thin films

“…P 4 , located at about 1.91 eV, is a very broad band with a full width at half maximum of 130-140 meV at 8 K. This emission band resembles that due to IEC of oxygen in ZnTe. 17 Since the behavior of P 4 in PL is made complicated by other deeplevel emission features, currently we do not have enough evidence to justify whether P 4 is oxygen related or sulfur related. It is left as an outstanding question for further investigation.…”