Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent

Taguchi, Tsunemasa

doi:10.1002/pssa.2210770256

Cited by 14 publications

(16 citation statements)

References 5 publications

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“…Fig. 1 illustrates the known (see [1,5,9,10,13] [5,10]. They were found by adding the A 0 X exciton binding energy ε bA =16 meV to the measured hν m (A 0 X) vs. x dependences (it is assumed that ε bA ≠ φ(x)).…”

Section: Methodsmentioning

confidence: 99%

“…2) The 4.2 K hν m (A 0 X) vs. x calibration dependences are also given in [1,9] and presented in Fig. 1 (curves 3 and 4).…”

Section: The 42 K Hν M Vs X Dependencesmentioning

confidence: 95%

“…1 (curves 3 and 4). X) value at x = 0) and its 2 The A 0 X induced emission band in 4.2 K Cd 1-x Zn x Te edge luminescence spectrum could be identified due to its comparatively high half-width as compared with the corresponding for the D 0 X induced emission band (see, for example, [1,11,14,17] and below). In addition to the stated, some other arguments how to identify the A 0 X induced emission band in the 4.2 K Cd 1-x Zn x Te edge luminescence spectrum, when in it only one of two excitonic emission bands are observed are given in [15,16].…”

Section: The 42 K Hν M Vs X Dependencesmentioning

confidence: 99%

“…In addition to the stated, some other arguments how to identify the A 0 X induced emission band in the 4.2 K Cd 1-x Zn x Te edge luminescence spectrum, when in it only one of two excitonic emission bands are observed are given in [15,16]. [1,5,9,10], the obtained x value is x = x 0 + Δx = 0.073 ± 0.012 (x 0 is the average x value and Δx is deviation of the x value from the average one), i.e. is found with a rather low accuracy (the relative inaccuracy of x determination Δx /x 0 ≈ ±23% is rather large).…”

Section: The 42 K Hν M Vs X Dependencesmentioning

confidence: 99%

“…So, the luminescent method -measurements of the 1.6 [8], 2 [4], 4.2 [1,5,9,10,13], 12 [2], 77 [6], 80 K [3] and room temperature T = 295…300 K [2,7,11] peak positions of the edge emission bands in principle could be used for finding composition of 1 In many of the cited works the band gap energy E g vs. x dependences are given. They were found from the obtained in the experiment peak positions of the exciton (carrier) induced emission hν m vs. x dependences by taking into account exciton (carrier) binding energies.…”

mentioning

confidence: 99%

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On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

Glinchuk¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Section: Methodsmentioning

confidence: 99%

“…2) The 4.2 K hν m (A 0 X) vs. x calibration dependences are also given in [1,9] and presented in Fig. 1 (curves 3 and 4).…”

Section: The 42 K Hν M Vs X Dependencesmentioning

confidence: 95%

Section: The 42 K Hν M Vs X Dependencesmentioning

confidence: 99%

Section: The 42 K Hν M Vs X Dependencesmentioning

confidence: 99%

mentioning

confidence: 99%

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On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

Glinchuk¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Investigation of p‐CdTe and p‐Zn_xCd_1−xTe Single Crystals by ps‐Laser‐Induced Gratings and by Photoluminescence

Rückmann

Petrauskas²,

Netiksis³

et al. 1987

Physica Status Solidi (b)

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(a), M. PETRAUSKAS (b), V. NETIR~IS (b), G. TAMULAITIS (b), and J. HALFPAP (a) From the measured erasure times of transient gratings created in the volume and on the surface of non-intentionally doped p-type CdTe and Zn,Cdl-,Te (z 5 0.11) single crystals the freecarrier lifetime and the surface recombination velocity a t room temperature are determined, respectively. The erasure time of the surface grating in CdTe i s found to be 130 ps, which is one order smaller than that of the volume grating. A lifetime shortening is observed in mixed crystal. Moreover, using cw-laser excitation the samples are characterized additionally by photoluminescence investigation a t low temperatures to test the quality, to determine the mole fraction, and to identify impurities. The AoX-line observed is interpreted as due t o a single acceptor on Te site.In the mixed crystals at z 2 0.09 the two-mode behaviour of LO-phonons and an u p to now not observed splitting of the AoX-line are found.Aus der Messung der Loschzeiten von im Volumen bzw. auf der Oberflache von undotierten pleitenden CdTe-und Zn,Cdl-,Te (z 5 0,ll)-Einkristallen erzeugten transienten Gittern werden die Lebensdauer der freien Triiger bzw. die Oberflachenrekombinationsgeschwindigkeit bei Raumtemperatur ermittelt. Die Loschzeit des Oberflachengitters in p-CdTe ist um ca. eine GroBenordnung kleiner als die des Volumengitters und betragt 130 ps. I n den Mischkristallen wird eine Verkiirzung der Lebensdauer der freien TrLger heobachtet. Dardberhinaus wird die Photolumineszenz der Proben bei niedrigen Temperaturen und cw-Laser Anregung untersucht, um die Probenqualitiit zu testen, das Mischungsverhaltnis zu bestimmen und Verunreinigungen zu identifizieren. Als Ursache fur die beobachteten AOX-Linien wird ein einfacher Akzeptor auf Te-Platz angenommen. In den Mischkristallen mit r 2 0,09 wird das Zwei-Moden-Verhalten der LO-Phononen und eine bisher nicht bekannte Aufspaltung der AOX-Linie gefunden.

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Exchange disorder band bending of the Cd_1−xFe_xS diluted magnetic semiconductor

Chou

Kuo

Chen

et al. 1996

Physica Status Solidi (b)

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The energy of excitons A, B, and C of Cd, -,Fe,S (x < 0.02) is studied as a function of Fe concentration at T = 10 K in the absence of a magnetic field. The observed band bending effect (largest for exciton A) is attributed to the s, p-d exchange interaction correction resulting from the exchange disorder.A particular class of mixed crystals is formed by the so-called diluted magnetic semiconductors (DMS, see e.g.[7]), in which nonmagnetic cations A are substituted by magnetic ions (typically transition metal ions, such as Mn, Fe, or Co). For these materials the s, p-d exchange interaction between band electrons and magnetic ions strongly modifies the random chemical potential and consequently the bowing effects. The bowing of the energy gap was observed for CdMnS [S], ZnMnSe [9, lo], and ZnMnTe [ll]. However, ') Chung Li 32023,

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Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent

Cited by 14 publications

References 5 publications

On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

Investigation of p‐CdTe and p‐Zn_xCd_1−xTe Single Crystals by ps‐Laser‐Induced Gratings and by Photoluminescence

Exchange disorder band bending of the Cd_1−xFe_xS diluted magnetic semiconductor

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Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent

Cited by 14 publications

References 5 publications

On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

Investigation of p‐CdTe and p‐ZnxCd1−xTe Single Crystals by ps‐Laser‐Induced Gratings and by Photoluminescence

Exchange disorder band bending of the Cd1−xFexS diluted magnetic semiconductor

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Investigation of p‐CdTe and p‐Zn_xCd_1−xTe Single Crystals by ps‐Laser‐Induced Gratings and by Photoluminescence

Exchange disorder band bending of the Cd_1−xFe_xS diluted magnetic semiconductor