Sulfur forming an isoelectronic center in zinc telluride thin films

Ge, Weikun; Lam, S.B.; Sou, Iam Keong; Wang, Jiannong; Wang, Yuqi; Li, Guohua; Han, Hongxian; Wang, Zhaoping

doi:10.1103/physrevb.55.10035

Cited by 17 publications

(10 citation statements)

References 23 publications

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“…3,4 On the other hand, As and Te atoms can form isoelectronic centers in N-rich GaNAs and S-rich ZnSTe alloys, respectively. [5][6][7][8][9][10] A hole is bound at these centers by a short-range potential resulting from the large difference of electronegativities between S and Te or N and As atoms.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Fang

Liu

et al. 2002

Phys. Rev. B

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ZnS 1Ϫx Te x (0.02рxр0.3) alloys are studied by photoluminescence under hydrostatic pressure at room temperature. Only a wide emission band is observed for each sample. Its peak energy is much lower than the corresponding band gap of alloys. These bands are ascribed to the radiative annihilation of excitons bound at Te n (nу2) isoelectronic centers. The pressure coefficients of the emission bands are smaller than those of alloy band gaps from 48% to 7%. The difference of the pressure coefficient of the emission band and the band gap increases when the binding energy of Te n centers decreases. It seems contrary to our expectation and needs further analysis. The integrated intensities of emission bands decrease with increasing pressure due to the decreasing of the absorption coefficient associated with the Te n centers under pressure. According to this model the Stokes shifts between the emission and absorption bands of the Te n centers are calculated, which decrease with the increasing Te composition in alloys.

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Section: Introductionmentioning

confidence: 99%

“…[7][8][9][10] Recent advances of molecular-beam epitaxy ͑MBE͒ technology made the growth of ZnSTe alloys with whole composition possible. 4,5 It then gives the possibility of investigation of the Te isoelectronic centers in the ZnSTe alloys with larger Te composition.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Fang

Liu

et al. 2002

Phys. Rev. B

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“…S in ZnS y Te 1Ày (y ¼ 0À0.29) It was predicted [6] that sulfur would form IEC in ZnSTe with a binding energy of about 100-160 meV, however, only a little work [7] devotes to the study of sulfur IEC in ZnSTe. In the following, we have studied the sulfur-related exciton localization in Te-rich ZnSTe alloys.…”

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confidence: 99%

Exciton localization due to isoelectronic substitution in ZnSTe

Yang

Sun

et al. 2007

Journal of Luminescence

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“…In particular, the isoelectronic doping with oxygen of some II-VI semiconductors has shown that oxygen gives rise to deep traps [35][36][37][38] in which carriers recombine radiatively [39][40][41][42][43]. Cr-doped zinc chalogenides [44][45][46] have been used as broadly tunable continuous wave lasers with negligible non-radiative decay at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Ionization energies of amphoteric-doped Cu2ZnSnS4: Photovoltaic application

Tablero

2014

Journal of Alloys and Compounds

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The substitution of Cu, Sn or Zn in the quaternary Cu 2 ZnSnS 4 semiconductor by impurities that introduce intermediate states in the energy bandgap could have important implications either for photovoltaic or spintronic applications. This allows more generation-recombination channels than for the host semiconductor. We explore and discuss this possibility by obtaining the ionization energies from total energy first-principles calculations. The three substitutions of Cu, Sn and Zn by impurities are analyzed. From these results we have found that several impurities have an amphoteric behavior with the donor and acceptor energies in the energy bandgap. In order to analyze the role of the ionization energies in both the radiative and non-radiative processes, the host energy bandgap and the acceptor and the donor energies have been obtained as a function of the inward and outward impurity-S displacements. We carried out the analysis for both the natural and synthetic CZTS. The results show that the ionization energies are similar, whereas the energy band gaps are different.

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Sulfur forming an isoelectronic center in zinc telluride thin films

Cited by 17 publications

References 23 publications

Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Exciton localization due to isoelectronic substitution in ZnSTe

Ionization energies of amphoteric-doped Cu2ZnSnS4: Photovoltaic application

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