Photoluminescence from<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">ZnS</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Te</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>alloys under hydrostatic pressure

Fang, Zhijia; Li, Guohua; Liu, Nanzhu; Zhu, Zongqiang; Han, Hongxian; Ding, Kan; Ge, Weikun; Sou, Iam Keong

doi:10.1103/physrevb.66.085203

Cited by 8 publications

(5 citation statements)

References 22 publications

(33 reference statements)

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“…This is expected as we discussed before that the impurity states consist almost entirely of the host valence-band states. For the single Te impurity, our calculated pressure coefficient is still close to the host material, but the experimental results of Fang et al 31,32 have a pressure coefficient of 89 meV/GPa. This could be just an anomaly of the single sample measured in Ref.…”

Section: F Impurity State Pressure Coefficientsupporting

confidence: 74%

See 1 more Smart Citation

First principles calculations of ZnS:Te energy levels

Wang

2003

Phys. Rev. B

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A comprehensive density-functional calculation for the ZnS:Te isoelectronic impurity state is presented. We deploy a charge patching method that enables us to calculate systems containing thousands of atoms. We found that the impurity state is only weakly localized, and previous calculations using 64-atom cells were severely unconverged. Our calculated impurity binding energy agrees with experimental photoluminescence excitation spectrum. We have analyzed the impurity wave function in both real space and the reciprocal space, and in terms of the host bulk valence bands. We have also calculated the Stokes shifts and Jahn-Teller effects. We found small Stokes shift compared to the experimental results, which might indicate the limitations of the current method. We also calculated the Te n clusters and their impurity states. We found six ͑counting spin͒ bound states inside the band gap of ZnS for all 1рnр4. We obtained pressure coefficients for Te n , all close to the value of bulk ZnS. This is consistent with the fact that the impurity states of Te n consist almost entirely of the bulk valence bands of ZnS. Finally, we have calculated the effects of spin-orbit coupling for the impurity state eigenenergies.

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Section: F Impurity State Pressure Coefficientsupporting

confidence: 74%

“…However, for the Te n (nу2) clusters, their pressure coefficients are similar to that of bulk ZnS. 31 It is not clear what causes the large pressure coefficient for Te 1 . It is not even sure whether that is only an anomaly in the measured samples.…”

Section: Introductionmentioning

confidence: 99%

First principles calculations of ZnS:Te energy levels

Wang

2003

Phys. Rev. B

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“…From their graph, the pressure coefficient is almost constant with respect to composition. We calculate for this material at x = 0.3 and find the value to be 5.732 meV/kbar which is very close to the value of Fang et al [21] within experimental uncertainty. Moreover, the band gap pressure coefficient for GaAs 0.88 Sb 0.12 is reported by Prins et al [22] to be 9.5 meV/kbar and our calculations show value of 11.516 meV/kbar, close to that of GaAs.…”

Section: Comparison With Experiments and Other Calculationssupporting

confidence: 70%

“…From the perspective of the above analyzed trends with respect to nearest neighbor distance and ionicity in the order of CdZnS, CdZnSe, CdZnTe, our result is also reasonable. For ternary compound ZnS 0.3 Te 0.7 , Fang et al [21] found that the band gap pressure coefficient is about 6.2 meV/kbar. From their graph, the pressure coefficient is almost constant with respect to composition.…”

Section: Comparison With Experiments and Other Calculationsmentioning

confidence: 98%

Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

Chen

Ravindra

2012

J Mater Sci

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A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.

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“…It was observed that the binding energy decreases monotonically with an increase in the composition of Te. Further, the potential differences between the Te n clusters and the host atoms decreases with an increase in the Te composition [39]. The spectra of samples with a Te concentration of less than 1% show two emission bands from the Te 1 and Te 2 centers.…”

Section: Optical Characteristics Of Zns and Zns:te Nwsmentioning

confidence: 93%

Hybrid nanowire–multilayer graphene film light-emitting sources

Kim¹,

Choi²,

Jung³

et al. 2010

Nanotechnology

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We report a versatile hybrid device consisting of one-dimensional ZnS and Te-doped ZnS (ZnS:Te) nanowires (NWs) upon two-dimensional multilayer graphene films (MGFs). Single-crystalline ZnS and ZnS:Te NWs were grown directly on a MGF without a catalyst, and exhibited blue-green and blue emission peaks of ∼ 503 and ∼ 440 nm. A field emission light emitter using ZnS:Te NWs on a MGF was demonstrated, and it indicates excellent contact properties between the NWs and MGFs. The resulting hybrid devices are promising candidates for potential applications as building blocks for the development of highly functional and efficient electroluminescent devices and field-emitting devices including flexible and/or transparent display devices.

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Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Cited by 8 publications

References 22 publications

First principles calculations of ZnS:Te energy levels

First principles calculations of ZnS:Te energy levels

Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

Hybrid nanowire–multilayer graphene film light-emitting sources

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