Annealing and light effect on optical and electrical properties of ZnS thin films grown with the SILAR method

Influence of films thickness and structure on the photo-response of ZnO films

“…The decrease in band gap with increasing annealing temperature can be attributed to the improvement in the crystals, in morphological changes of the films and in changes of atomic distances and grain size. This result is in agreement with literature, XRD and SEM results [16,20,[25][26][27]. The other reason for Table 1 The grain size (D), dislocation density (d) and full width at half maximum (FWHM) values of as-deposited and annealed ZnO thin films.…”

“…4 and 5 and Tables 2, the band gap energies decreased from 3.49 to 3.19 eV with increasing film thickness. There are several reasons for this behaviour, which are given in the literature as impurity levels, and structural changes [16,25,30,31]. The first reason is inoculating the impurity levels with conductivity band.…”

Fabrication and characterization of NiO thin films prepared by SILAR method

“…4 and Table 3, the band gap values decreased from 3.71 to 3.67 eV with increasing film thickness. The decrease in band gap with increasing film thickness can be attributed to the improvement in the crystals, in morphological changes of the films, in changes of atomic distances and grain size and structural defects in the films [23,28,29].…”

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

“…Ates et al [277] synthesized nanocrystalline cubic structured ZnS thin films on glass substrate at room temperature. The band gap changed from 3.73 to 3.57 eV with increasing annealing temperature.…”