2015
DOI: 10.1016/j.jallcom.2014.10.194
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Fabrication and characterization of NiO thin films prepared by SILAR method

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Cited by 81 publications
(25 citation statements)
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References 33 publications
(37 reference statements)
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“…These E g values are in good agreement with the values reported in [4,7,8,13] for NiO thin films. The decrease of E g with annealing temperature may be attributed to the increase of crystallite size and decrease of defect sites concentration [13,14]. …”
Section: Resultssupporting
confidence: 91%
“…These E g values are in good agreement with the values reported in [4,7,8,13] for NiO thin films. The decrease of E g with annealing temperature may be attributed to the increase of crystallite size and decrease of defect sites concentration [13,14]. …”
Section: Resultssupporting
confidence: 91%
“…These values are given in Table 1. The large size of the grains and the small value of the dislocation density is an indication of good crystallization [43].…”
Section: Crystal Structure Parameters Calculationsmentioning
confidence: 99%
“…Bu yöntemler arasında SILAR nispeten basit, çevre dostu, güvenli, düşük sıcaklık uyumlu ve uygun maliyetli olduğu için umut verici bir tekniktir [14,15].…”
Section: Introductionunclassified