2017
DOI: 10.12693/aphyspola.131.417
|View full text |Cite
|
Sign up to set email alerts
|

Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures

Abstract: In the present investigation, nanocrystalline NiO thin films were prepared by thermal oxidation annealing of DC magnetron sputtered Ni thin films on quartz substrates. The effect of annealing temperature on the films structural, morphological and optical properties was investigated. The XRD analysis shows that all prepared films were of NiO with cubic structure and (200) orientation. The thickness of NiO films was in range of 40-100 nm. The average crystallite size is found to increase from 16 to 36 nm and the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 18 publications
(5 citation statements)
references
References 14 publications
(24 reference statements)
0
5
0
Order By: Relevance
“…Several techniques have been used to prepare NiO thin films, including pulsed laser deposition [5], plasma oxidation [7], DC and RF magnetron sputtering [8][9][10][11][12], sol-gel [13,14] and so on. In addition to these preparation methods, NiO films can also be prepared by thermal oxidation of nickel film [16]. This method, compared to other techniques, is low cost, efficient and convenient.…”
Section: Introductionmentioning
confidence: 99%
“…Several techniques have been used to prepare NiO thin films, including pulsed laser deposition [5], plasma oxidation [7], DC and RF magnetron sputtering [8][9][10][11][12], sol-gel [13,14] and so on. In addition to these preparation methods, NiO films can also be prepared by thermal oxidation of nickel film [16]. This method, compared to other techniques, is low cost, efficient and convenient.…”
Section: Introductionmentioning
confidence: 99%
“…This transmittance value is either similar to or higher than the alternative inorganic materials for HIL [11,15]. As shown in Figure 2a, the transmittance of films annealed at elevated temperatures increases because of the improved crystalline microstructure [16]. Because the materials under the EML inevitably absorb light emitted from the QDs in the bottom emission structure, the transmittance must be ensured before the fabrication of the devices.…”
Section: Characterizationmentioning
confidence: 82%
“…Certainly, the annealing will have an impact since it is known that under certain conditions, sample temperatures above 400 1C can change the surface morphology and structure of NiO x towards a higher degree of roughness. 46,66,67 O and Ni atoms can be very mobile at elevated temperatures in an O 2 atmosphere. 53 Moreover, when water is split at the NiO x surface according to the reaction H 2 O -OH À + H + , the diffusion of hydrogen along defect structures, e.g., step edges or holes as shown in ESI † Fig.…”
Section: Progressive Oxygen Vacancy Formation On Nio X Thin Filmsmentioning
confidence: 99%