Annealing and light effect on structural, optical and electrical properties of CuS, CuZnS and ZnS thin films grown by the SILAR method

Yıldırım, Mehmet Ali; Ateş, Aytunç; Astam, Aykut

doi:10.1016/j.physe.2009.04.014

Cited by 104 publications

(64 citation statements)

References 32 publications

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“…For example, in Cu x S compositions the resistivity of layers ranges from 10 Ω·cm to 10 −4 Ω·cm for x = 2 to x = 1 [10]. Also a direct band gap of 1.25 eV to 3.2 eV has been reported for samples with different phases and compositions prepared by different techniques under different conditions [2,11,12,[14][15][16]. Thin layers of copper sulfide contain five * E-mail: roshanrafiei@yahoo.com stable phases at room temperature including: covellite (CuS), analite (Cu 1.75 S), digenite (Cu 1.8 S), djurleite (Cu 1.95 S) and chalcocite (Cu 2 S) [17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

“…For the deposition of thin CuS layers, various physical and chemical methods, including chemical bath deposition (CBD) [2,15,[24][25][26], vacuum evaporation [27], successive ionic layer adsorption and reaction (SILAR) [18,28] and spray pyrolysis deposition [6,11,16,[29][30][31][32] have been used. These different methods mainly affect the morphology of copper sulfide samples.…”

Section: Introductionmentioning

confidence: 99%

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Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Nazari

Taloobaghi

Eshghi

2017

Materials Science-Poland

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In this study, physical properties of copper sulfide thin films deposited on glass substrates by spray pyrolysis method at different temperatures (260°C, 285°C and 310°C) were investigated. The influence of annealing time on the physical properties of grown layers was also studied. According to FESEM images, the sizes of the compact copper sulfide grains were varied from about 100 nm to 60 nm. Hall effect and resistivity measurements confirmed that all samples had p-type conductivity. The XRD patterns showed that, together with the dominant digenite phase (Cu 1.8 S) in all samples, the copper-rich phases also appeared as a result of increasing substrate temperature. The optical UV-Vis spectra analysis showed that due to increasing the substrate temperature, the band gap of the layers was reduced from about 2.4 eV to 2.0 eV. We found that as a result of annealing at 400°C for 1.5 h in Ar atmosphere, the sample which was initially grown at 310°C with the highest copper content, totally transformed into the polycrystalline monoclinic chalcocite phase (Cu 2 S) with 3D nanoporous architecture.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Nazari

Taloobaghi

Eshghi

2017

Materials Science-Poland

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“…These deposition conditions can be optimized for improving quality of CuS films. There are many reports about effect of deposition conditions but, these investigations have been carried out by conventional one-factor-at-a-time methods [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Optimization and modelling of preparation conditions of CuS thin films deposited by successive ionic layer adsorption and reaction (SILAR) method using response surface methodology

Yücel

Gökhan

2015

J Mater Sci: Mater Electron

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In this study, CuS thin films were deposited on glass substrates by SILAR method with different pH, dipping time and dipping cycles. For the first time, response surface methodology was used for optimization CuS thin film coating parameters. 5-level-3-factor central composite design was employed to evaluate the effects of the deposition parameters (pH, dipping time and dipping cycles) on the optical band gap of the films. The significant level of the main effects and the interactions were investigated by analysis of variance. The morphological, structural and optical properties of the films were investigated by SEM, XRD and UV-Vis. The optimum pH, dipping time and dipping cycles were found to be 11.5, 31 s and 15 cycles, respectively. Under these conditions, the experimental band gap of CuS was observed as 2.18 eV which was well in close agreement with predicted value (2.11 eV) by the model. Quality of the film was improved after chemometrics optimization.

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“…For this reason, we have tried to develop Cu-Zn-S compound (CZS) with three elements for absorber layer in solar cells; this compound can be simpler in comparison with CZTS. Some groups reported about this material for applications in Inorganic Electro-Luminescence [3,4] or just basic research as semiconductor [5][6][7]. In our work, the CZS films were prepared by spray pyrolysis method, which is non-vacuum and low cost.…”

Section: Introductionmentioning

confidence: 99%

Copper Zinc Sulfur Compound Solar Cells Fabricated by Spray Pyrolysis Deposition for Solar Cells

Kitagawa¹,

Ito²,

Nguyen³

2013

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Annealing and light effect on structural, optical and electrical properties of CuS, CuZnS and ZnS thin films grown by the SILAR method

Cited by 104 publications

References 32 publications

Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Crystalline phase evolution in nanostructured copper sulfide thin films prepared by spray pyrolysis method: the effect of annealing

Optimization and modelling of preparation conditions of CuS thin films deposited by successive ionic layer adsorption and reaction (SILAR) method using response surface methodology

Copper Zinc Sulfur Compound Solar Cells Fabricated by Spray Pyrolysis Deposition for Solar Cells

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