Te and Se layers were deposited on〈glass/FTO/flat-TiO2〉by electrochemical deposition. The Te-Se-stacked layer was annealed at 200°C, and then, the migration of Te into the Se layer by annealing was confirmed using auger electron spectroscopy (AES), which was performed by Te doping on the Se layer. Au back contact was coated by vacuum deposition on the Te-doped Se layer, resulting in superstrate-structured solar cells of〈glass/FTO/flat-TiO2/Se-doped Te/Au〉with a 0.50 V open-circuit voltage, 6.4 mA/cm2photocurrent density, 0.36 fill factor, and 1.17% conversion efficiency.
Cu-Zn-S (CZS) films were deposited by the spray pyrolysis method. As-deposited CZS film showed a low crystallinity. The resistivity of CZS film with
Cu Cu Zn ratio of 50% is around Glass FTO TiO In S CZS carbon . The best cell was observed at the CZS films with Cu Cu Zn ratio of 50%; these cells depicted a conversion efficiency of 1.7%.
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