2008
DOI: 10.1002/adma.200701374
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Anisotropy in Organic Single‐Crystal Photovoltaic Characteristics

Abstract: Organic single crystals have been well researched for many years.[1] Typical vapor-phase growth of organic crystals developed from vertical [2] to horizontal growth [3] in order to achieve improved crystalline quality. Recently, a field-effect study on these single-crystal semiconductors demonstrated high carrier mobilities, up to ca. 15 cm 2 V -1 s -1 , along with anisotropic charge-transport properties. [4,5] These single-crystal transistors were usually fabricated with rigid and thick crystals (tens of micr… Show more

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Cited by 80 publications
(51 citation statements)
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“…The strong and uniform birefringence of the single crystal under a cross-polarized microscope indicates that the intrinsic single-crystalline nature is well preserved after thermal deposition of the Au electrodes, as shown in the inset of Figure 3c. [21] Due to the presence of ferroelectric P(VDF-TrFE) gate dielectric layer, a well-saturated hysteresis of source-drain current (I DS ) was obtained as a function of gate voltage, as shown in Figure 3d Figure 3d, and significantly reduced the gate-leakage current between gate and drain electrodes, leading to a very low OFF state I DS of approximately 10 À11 A. The field-effect mobility of a single-crystalline TIPS-PEN FeFET was calculated from the slope of I DS versus gate voltage (V G ) in Figure 3d, using an equation suitable for the linear regime of drain current-voltage due to the application of a low source-drain voltage (V DS ) of À5 V in our device.…”
Section: Resultsmentioning
confidence: 99%
“…The strong and uniform birefringence of the single crystal under a cross-polarized microscope indicates that the intrinsic single-crystalline nature is well preserved after thermal deposition of the Au electrodes, as shown in the inset of Figure 3c. [21] Due to the presence of ferroelectric P(VDF-TrFE) gate dielectric layer, a well-saturated hysteresis of source-drain current (I DS ) was obtained as a function of gate voltage, as shown in Figure 3d Figure 3d, and significantly reduced the gate-leakage current between gate and drain electrodes, leading to a very low OFF state I DS of approximately 10 À11 A. The field-effect mobility of a single-crystalline TIPS-PEN FeFET was calculated from the slope of I DS versus gate voltage (V G ) in Figure 3d, using an equation suitable for the linear regime of drain current-voltage due to the application of a low source-drain voltage (V DS ) of À5 V in our device.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, along every individual microwire the color is uniform under a fixed polarization angle. These results indicate the anisotropic crystalline nature of the oriented microwire arrays and the single-crystal structure of an individual microwire caused by the molecular packing [23][24][25]. Fig.…”
Section: Developed Drop-casting Methods In the Saturated Solvent Atmosmentioning
confidence: 80%
“…54 Recently, Yang and coworkers assembled a solar cell based on a single crystal of tetracene (shown in Figure 9) as the light absorbing layer and a C60 electron transport layer. 55 The device showed efficiencies that were less than 1%, and efficiency depended critically on the thickness of the crystal used in addition to the crystal face that was irradiated. The authors hypothesized that the device suffered from low performance because of the poor absorption of visible light by tetracene.…”
Section: Crystalline Molecular Semiconductorsmentioning
confidence: 99%