Anisotropy and interaction effects of strongly strained SrIrO3 thin films

Fruchter, L.; Schneegans, Olivier; Li, Z. Z.

doi:10.1063/1.4960700

Cited by 18 publications

(16 citation statements)

References 35 publications

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“…Metallic behavior is observed for film thickness down to ~3 nm in agreement with previous results. [23][24][25][26][27]33 However, as thickness decreases a progressive upturn of the resistivity at low temperatures is detected. The temperature at which the minimum in the resistivity is found shifts up in temperature as thickness decreases and the system exhibits fully insulating behavior for the 2 nm thick sample, thus locating the MIT transition between 3 and 2 nm, in good agreement with previous reports.…”

Section: Resultsmentioning

confidence: 99%

Resistive Switching in Semimetallic SrIrO₃ Thin Films

Fuentes

Vasić

Konstantinović

et al. 2019

ACS Appl. Electron. Mater.

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Local electrical properties, measured by conductive atomic force microscopy, of semimetallic SrIrO3 thin films are reported. The appearance of an Anderson-type metal-insulator transition (MIT) triggered by disorder and spatial localization due to film thickness reduction is analyzed, as well as their influence on the resistive switching behavior. For thin enough films (below ~3nm) samples are insulating with hysteretic I-V curves indicative of reversible resistive switching behavior between two states of clearly different resistance at room temperature. A Table of Contents entry: Disorder and spatial localization due to thickness reduction allow generating a metal-insulator transition in semimetallic SrIrO3 thin films. Below about 3 nm films are insulating with hysteretic I-V curves indicative of resistive switching behavior at room temperature. Current maps allow demonstrating the writing/erasing processes making evident the feasibility of the system for the implementation of Re-RAMs

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Section: Resultsmentioning

confidence: 99%

Resistive Switching in Semimetallic SrIrO₃ Thin Films

Fuentes

Vasić

Konstantinović

et al. 2019

ACS Appl. Electron. Mater.

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“…In contrast, the Hall effect for the same thick films grown on (001)-LSAT substrates are nearly linear (Fig.10b). This Hall effect evolution under small in-plane compressive strain suggests that the band structure of be not strongly temperature dependent above the MIT temperature but slightly increased as temperature decrease in the weak localization regime, indicating the reduction of carrier density due to localization 53 . The Hall traces provided the carrier density at a magnitude order of 10 19 cm -3 , and the carrier mobility at a magnitude order of 10 2 cm 2 V -1 s -1 , according to the two-carrier transport model for isotropic materials 13 .…”

Section: Basic Behaviorsmentioning

confidence: 93%

Review of Spin–Orbit Coupled Semimetal SrIrO₃in Thin Film Form

Zhang

Pang

Chen

et al. 2017

Critical Reviews in Solid State and Materials Sciences

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Spin-orbit coupling, locking the momentum of an electron to its spin, has been shown essential for giving rise to many novel physical behaviors. SrIrO 3 is a typical metallic member of the strong spin-orbit coupling iridate family. Its orthorhombic phase has been confirmed as a paramagnetic semimetal resulted from the interplay among spin-orbit coupling, electron correlation, and crystal field, and was theoretically predicted to host versatile topological phases. This article reviews the current knowledge on the preparation and the tunable properties of orthorhombic SrIrO 3 films. Experiments have demonstrated that orthorhombic SrIrO 3 can be successfully synthesized as films under substrate lattice constraint without high pressure, and the films frequently display metal-insulator transition due to disorder and weak-antilocalization owing to spin-orbit coupling. The properties of orthorhombic SrIrO 3 film are sensitive to the rotation and tilting of the IrO 6 octahedral, and consequently can be significantly tuned through strain engineering.Simultaneously, thickness dependent size effect is also remarkable in SrIrO 3 films.The accumulated research on SrIrO 3 films suggests an urgent demanding for research on superlattices constructed with orthorhombic SrIrO 3 , to better understand the mechanism of the electron structure evolution, and thus the relevant magnetic states and topological phases in orthorhombic SrIrO 3 and its family.

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“…Such films can be described as a distorted pseudo-cubic with a constant 0. 396nm [20][21][22][23][24][25][26][27][28]. Due to the crystal structure similar to manganites, the epitaxial films of the SrIrO 3 iridate can be an excellent component for the growth of heterostructures with manganites.…”

Section: Introductionmentioning

confidence: 99%

Magnetism at an iridate/manganite interface: Influence of strong spin-orbit interaction

et al. 2020

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The complex investigation of dc transport and magnetic properties of the epitaxial manganite/iridate heterostructure was carried out by mean of X-ray (XRD), dc resistance measurements, ferromagnetic resonance (FMR) and polarized neutron reflectivity (PNR).Epitaxial growth of the heterostructure proceeded according to the -cube-to-cube‖ mechanism with the small lattice turn. The dc measurement indicates the presence of a conduction channel at the iridate/manganite interface due to the charge leakage from iridate that makes it hole doped, while the manganite side becomes electron doped. This is confirmed by the first principles calculations based on density functional theory [Sayantika Bhowal, and Sashi Satpathy AIP Conference Proceedings 2005, 020007 (2018)] that show the charge transfer at the interface from the half-filled spin-orbit entangled J eff = 1/2 state of the iridate to the empty e ↑g states of manganite. The neutron scattering data show the turn of magnetization vector of the heterostructure (mainly manganite) on 26 degree closer to the external field with reducing temperature down to 10K. Additional ferromagnetic state appearing at T<100K indicate on emergence of ferromagnetism in the thin (10 nm) paramagnetic SIO film close to the interface.We have measured the dc voltage aroused on the SIO film caused by spin pumping and the anisotropic magnetoresistance in the heterostructure.

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Anisotropy and interaction effects of strongly strained SrIrO3 thin films

Abstract: International audienc

Cited by 18 publications

References 35 publications

Resistive Switching in Semimetallic SrIrO₃ Thin Films

Resistive Switching in Semimetallic SrIrO₃ Thin Films

Review of Spin–Orbit Coupled Semimetal SrIrO₃in Thin Film Form

Magnetism at an iridate/manganite interface: Influence of strong spin-orbit interaction

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Anisotropy and interaction effects of strongly strained SrIrO3 thin films

Abstract: International audienc

Cited by 18 publications

References 35 publications

Resistive Switching in Semimetallic SrIrO3 Thin Films

Resistive Switching in Semimetallic SrIrO3 Thin Films

Review of Spin–Orbit Coupled Semimetal SrIrO3in Thin Film Form

Magnetism at an iridate/manganite interface: Influence of strong spin-orbit interaction

Contact Info

Product

Resources

About

Resistive Switching in Semimetallic SrIrO₃ Thin Films

Resistive Switching in Semimetallic SrIrO₃ Thin Films

Review of Spin–Orbit Coupled Semimetal SrIrO₃in Thin Film Form