The complex investigation of dc transport and magnetic properties of the epitaxial manganite/iridate heterostructure was carried out by mean of X-ray (XRD), dc resistance measurements, ferromagnetic resonance (FMR) and polarized neutron reflectivity (PNR).Epitaxial growth of the heterostructure proceeded according to the -cube-to-cube‖ mechanism with the small lattice turn. The dc measurement indicates the presence of a conduction channel at the iridate/manganite interface due to the charge leakage from iridate that makes it hole doped, while the manganite side becomes electron doped. This is confirmed by the first principles calculations based on density functional theory [Sayantika Bhowal, and Sashi Satpathy AIP Conference Proceedings 2005, 020007 (2018)] that show the charge transfer at the interface from the half-filled spin-orbit entangled J eff = 1/2 state of the iridate to the empty e ↑g states of manganite. The neutron scattering data show the turn of magnetization vector of the heterostructure (mainly manganite) on 26 degree closer to the external field with reducing temperature down to 10K. Additional ferromagnetic state appearing at T<100K indicate on emergence of ferromagnetism in the thin (10 nm) paramagnetic SIO film close to the interface.We have measured the dc voltage aroused on the SIO film caused by spin pumping and the anisotropic magnetoresistance in the heterostructure.
Temperature evolution of pure spin current has been studied in an epitaxial thin-film bilayer La 2/3 Sr 1/3 MnO 3 /Pt deposited on a NdGaO 3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the ferromagnetic La 2/3 Sr 1/3 MnO 3 layer and detected in the Pt layer due to the inverse spin Hall effect. A considerable increase in the spin current magnitude has been observed upon cooling from the Curie point (350 K) down to 100 K. Using the obtained data, the temperature evolution of the mixed spin conductance g mix (T) has been extracted. It was found that the g mix (T) dependence correlates with magnetization in a thin area adjacent to the ferromagnetic-normal metal interface.
A complex study of the electron transport and magnetic characteristics of epitaxial manganite films La0.7Ba0.3MnO3 (LBMO) was carried out under conditions of the crystal structure tension caused by a mismatch between the parameters of the LBMO crystal and the substrate. The epitaxial thin films with the thickness 40-100 nm were grown by pulsed laser deposition at T = 700-800 °C in pure oxygen pressure 0.3-1 mbar. The substrates (110) NGO, (001) STO, (001) LAO, and (001) LSAT were used. By comparison of the lattice parameter of LBMO targets with substrate's one, the lattice mismatches were derived. We used substrates in which the lattice parameter was less than for the LBMO crystal one. It is shown that the temperature dependence of the film resistance in the low-temperature region does not depend on the film stress and is in good agreement with the calculation that takes into account the interaction of carriers with magnetic excitations in the presence of strongly correlated electron states. A nonmonotonic temperature dependence of the resistance of an LBMO film deposited on ferroelectric crystals PMN-PT that was observed. This feature is typical for manganites, and indicating the presence of ferromagnetism in the system was observed.
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