2010
DOI: 10.1021/la103293j
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Anisotropic Wetting on Microstrips Surface Fabricated by Femtosecond Laser

Abstract: In this paper, we present a new method to realize anisotropy by restricting a droplet on an unstructured Si hydrophobic domain between two superhydrophobic strips fabricated by femtosecond laser. The water contact angles and corresponding water baseline length were investigated. The results showed that anisotropy would vary with the volume-induced pinning-depinning-repinning behavior of the droplet. Furthermore, through the observation of water response on small Si domain, the adhesive force of the structure i… Show more

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Cited by 100 publications
(98 citation statements)
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References 59 publications
(85 reference statements)
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“…Structured texture and/or chemical heterogeneity can be potentially used to manipulate droplets in case of hydrophobic surfaces [1]. …”
Section: Results -Static Contact Angle In Anisotropic Wettingmentioning
confidence: 99%
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“…Structured texture and/or chemical heterogeneity can be potentially used to manipulate droplets in case of hydrophobic surfaces [1]. …”
Section: Results -Static Contact Angle In Anisotropic Wettingmentioning
confidence: 99%
“…Surfaces with static contact angle θ s < 90 • are considered to be hydrophilic and generally have good wettability properties. Surfaces with contact angle θ s = 90 − 150 • are hydrophobic and surfaces with θ s > 150 • and sliding angle less than 10 • are considered to be super-hydrophobic and are often used for liquid repelling applications [1].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Since the company of Kao in Japan firstly prepared superhydrophobic surface with contact angle of 174º [9], many techniques have been reported to produce superhydrophobic surfaces, including self-assembly, electrospinning, polymer imprinting, plasma-treated surfaces, lithography, and so on [10][11][12][13][14][15][16]. In recent years, more and more researches focus on manufacturing hydrophobic surface based on the technology of laser-induced microstructure.…”
Section: Introductionmentioning
confidence: 99%
“…The details of the experimental setup and the scanning method are described in our previous work. [38][39][40] A p-type silicon wafer was irradiated by a regenerative amplifi ed Ti:sapphire laser system (pulse duration: 50 fs; center wavelength: 800 nm; repetition: 1 kHz). The laser beam (constant average power of 20 mW) was focused on the sample by a microscope objective lens (NA = 0.45).…”
Section: Doi: 101002/admi201400388mentioning
confidence: 99%