Anisotropic study of photo-bolometric effect in Sb0.15Ge0.85Se ternary alloy at low temperature

Limberkar, Chaitanya; Patel, Anand; Nair, Salil; Joy, Jolly; Patel, K. C.; Solanki, G. K.; Pathak, V. M.

doi:10.1016/j.jallcom.2020.156391

Cited by 22 publications

(5 citation statements)

References 34 publications

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“…28,47,48 Typical detector parameters such as responsivity and detectivity for all three configurations are studied for the SnSe 2 photodetector as shown in Figure 4e. 49,50 Here, responsivity and detectivity are found to be 10.4 mA W −1 and 8.15 × 10 8 Jones, respectively, for the perpendicular to c-axis configuration that is higher compared to the parallel to c-axis configuration. Due to the superior photoresponse in the perpendicular to c-axis configuration, this configuration was kept fixed for further recording of photoresponse under other conditions.…”

Section: Resultsmentioning

confidence: 83%

“…Pataniya et al have reported a detailed discussion of DLDS and its role in the photodetection properties, in which the transition of photocarriers between valence and conduction bands is strongly affected due to the trapping of photocarriers into DLDS . In an ambient environment of room temperature, adsorption of oxygen atoms takes place on the surface defects that also play as trap centers and delay the recombination of photogenerated charge carriers that results in a long recovery time. ,, Typical detector parameters such as responsivity and detectivity for all three configurations are studied for the SnSe 2 photodetector as shown in Figure e. , Here, responsivity and detectivity are found to be 10.4 mA W –1 and 8.15 × 10 8 Jones, respectively, for the perpendicular to c -axis configuration that is higher compared to the parallel to c -axis configuration. Due to the superior photoresponse in the perpendicular to c -axis configuration, this configuration was kept fixed for further recording of photoresponse under other conditions.…”

Section: Results and Discussionmentioning

confidence: 99%

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Optical Switching Device Based on a Crystalline SnSe₂ Photodetector in Diverse Conditions

Gupta

Dalvaniya

Patel

et al. 2021

ACS Appl. Electron. Mater.

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Specifically for the optoelectronics field, it is always a provocative task for researchers to fabricate a device that can endure diverse extreme conditions without losing its fundamental properties. Metal dichalcogenides have stimulated influential research inquisitively due to the noteworthy optoelectronic properties and device applications designed for extreme environmental circumstances. Among metal dichalcogenides, SnSe2 is an exceptionally studied material due to its extraordinary photosensing ability. In the present article, exploration of the photoresponse nature of the vapor-phase-grown SnSe2 single crystal is elaborated comprehensively. The stoichiometric purity of constituents was verified by the energy-dispersive X-ray analysis (EDAX). The X-ray diffraction (XRD) pattern unveiled a highly crystalline hexagonal lattice structure. A surface morphological analysis is carried out by optical and scanning electron microscopy (SEM) experiments in which layered growth mechanism and randomly oriented hexagonal sheets are observed. Additionally, crystalline nanoflakes are observed in high-resolution transmission electron microscopy (HR-TEM), wherein the interlayer lattice spacing is found to be 0.65 nm. The first-order temperature coefficient and anharmonicity constant are determined from the dependence of Raman mode on low temperatures. Afterward, the photodetection properties are inspected for distinct conditions such as perpendicular and parallel to the c-axis, varied intensity of mono- and polychromatic illumination with different externally applied biases to the detector, and cryogenic temperatures down to 10 K. To the best of our knowledge, sensor properties at 10 K are being reported for the first time in this article. As per investigation, the remarkable properties of SnSe2 single crystals such as reproducibility, steadiness, self-biased nature, ability to withstand and responding to the illumination even at a low temperature of 10 K make them a strong candidate for future optoelectronic switching applications for cryotronics.

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Section: Resultsmentioning

confidence: 83%

Section: Results and Discussionmentioning

confidence: 99%

Optical Switching Device Based on a Crystalline SnSe₂ Photodetector in Diverse Conditions

Gupta

Dalvaniya

Patel

et al. 2021

ACS Appl. Electron. Mater.

Self Cite

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“…The shift was attributed to Vegard’s law, which states that it is not necessary that the dopant generates an individual diffraction peak other than the host peak, but that it has the ability to produce a sufficient shift in the position of the diffraction peak in the host lattice due to substitution of host ions using the dopant ions. [ 16,17 ] The shift in the peak position of the Eu 3+ doped Sr 2 YNbO 6 phosphors with respect to the host can also be explained using Bragg’s formula,

2 dsinθ = nλ

. There is the possibility of replacing the Y 3+ site in the host lattice.…”

Section: Resultsmentioning

confidence: 99%

Europium doped Sr₂YNbO₆ double perovskite phosphor for photoluminescence and thermoluminescence properties

et al. 2023

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A luminescent double perovskite phosphor Sr 2 YNbO 6 doped with Eu 3+ crystallized to the monoclinic phase and was synthesized successfully via a conventional hightemperature combustion method. The formation of the crystal structure, phase purity, and surface morphology were studied using X-ray diffraction patterns and scanning electron microscopy. The characteristic vibrations between the atoms of the functional groups present in phosphor were studied using Fourier transform infrared spectra analysis. The luminescence properties of the prepared phosphors were investigated in terms of photoluminescence (PL) and thermoluminescence (TL).PL excitation spectra exhibited charge transfer bands and the characteristic 4f 6 transitions of Eu 3+ . A prominent PL emission was obtained for the phosphor doped with 4 mol% Eu 3+ under the 396 nm excitation wavelength. PL emission quenching was

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“…We Bolometric effect is due to the change of transport conductance of the material under light heating, [46,47] which usually leads to negative photoresponse in 2D materials photodetectors. [48] Bolometric effect in Bi 2 O 2 Se materials has been observed in previous study.…”

Section: Effects Of Visible Light Illumination On the Electronic Prop...mentioning

confidence: 99%

Optoelectronic Coincidence Detection with Two‐Dimensional Bi₂O₂Se Ferroelectric Field‐Effect Transistors

Yan

Ying

Yan

et al. 2021

Adv Funct Materials

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Information processing with optoelectronic devices provides an alternative way to efficiently process hybrid optical and electronic signals. Ferroelectric field‐effect transistors (FeFETs) can effectively respond to external optical and electrical stimuli by modulating their polarization states. Here, a 2D FeFET is demonstrated by the epitaxial growth of high‐quality 2D bismuth layered oxyselenide (Bi2O2Se) films on PMN‐PT(001) ferroelectric single‐crystal substrates. Upon switching the polarization direction of PMN‐PT, the authors realize in situ, reversible, and nonvolatile manipulation of the resistance of Bi2O2Se thin film (≈877%). The device simultaneously exhibits a polarization‐dependent photoresponse through visible light (λ = 405 nm) and infrared light (IR, λ = 980 nm) illumination. Combining optical stimuli with ferroelectric gating, it is demonstrated that the devices not only show nonvolatile memory and optoelectronic responses, but also show coincidence detection of visible and IR light. This work holds great potential in constructing new multiresponse and multifunction 2D‐FeFETs.

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Anisotropic study of photo-bolometric effect in Sb0.15Ge0.85Se ternary alloy at low temperature

Cited by 22 publications

References 34 publications

Optical Switching Device Based on a Crystalline SnSe₂ Photodetector in Diverse Conditions

Optical Switching Device Based on a Crystalline SnSe₂ Photodetector in Diverse Conditions

Europium doped Sr₂YNbO₆ double perovskite phosphor for photoluminescence and thermoluminescence properties

Optoelectronic Coincidence Detection with Two‐Dimensional Bi₂O₂Se Ferroelectric Field‐Effect Transistors

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Anisotropic study of photo-bolometric effect in Sb0.15Ge0.85Se ternary alloy at low temperature

Cited by 22 publications

References 34 publications

Optical Switching Device Based on a Crystalline SnSe2 Photodetector in Diverse Conditions

Optical Switching Device Based on a Crystalline SnSe2 Photodetector in Diverse Conditions

Europium doped Sr2YNbO6 double perovskite phosphor for photoluminescence and thermoluminescence properties

Optoelectronic Coincidence Detection with Two‐Dimensional Bi2O2Se Ferroelectric Field‐Effect Transistors

Contact Info

Product

Resources

About

Optical Switching Device Based on a Crystalline SnSe₂ Photodetector in Diverse Conditions

Optical Switching Device Based on a Crystalline SnSe₂ Photodetector in Diverse Conditions

Europium doped Sr₂YNbO₆ double perovskite phosphor for photoluminescence and thermoluminescence properties

Optoelectronic Coincidence Detection with Two‐Dimensional Bi₂O₂Se Ferroelectric Field‐Effect Transistors