Anisotropic magnetoresistive sensors of the magnetic field and current

Kasatkin, S. I.; Murav'ev, A. M.; Plotnikova, N. V.; Amelichev, V. V.; Galushkov, A. I.; Gamarts, I. A.; Лопатин, В. В.; Saurov, A. N.

doi:10.1134/s0005117909060101

Cited by 4 publications

(3 citation statements)

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“…Therefore, there is a special interest in studying nanostructures containing magnetoresistive and magnetostrictive materials in a certain ratio. Thin FeNiCo layers have a high anisotropic magnetoresistive (AMR) effect (~2-4%) and a low magnetostriction coefficient [8][9][10]. In the Co 50 Fe 50 layers, a low AMR effect (~0.3%) and a significant magnetostrictive effect are observed [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

Zhukov

Amelichev

Kasatkin

et al. 2021

Sensors

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The article presents the results of experimental studies of multilayer nanostructures of magnetic straintronics formed by magnetron sputtering on a 100 mm silicon wafer. The object of the study is two types of nanostructures: Ta/FeNiCo/CoFe/Ta and Ta/FeNi/CoFe/Ta, differing in the ratio of magnetic layers. The magnetic and magnetoresistive characteristics of multilayer nanostructures under varying mechanical loads are studied both on a 100 mm wafer and in the form of 4 × 20 mm2 samples of two types. The first, where the axis of easy magnetization is directed along the long side of the sample, and the second, where the axis of easy magnetization is a tilt at 45°. Based on the obtained data, the conclusions about the practical application of these nanostructures in magnetic straintronics elements are drawn.

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Section: Introductionmentioning

confidence: 99%

“…Thin FeNiCo layers have a high anisotropic magnetoresistive (AMR) effect (~2-4%) and a low magnetostriction coefficient [8][9][10]. In the Co 50 Fe 50 layers, a low AMR effect (~0.3%) and a significant magnetostrictive effect are observed [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

Zhukov

Amelichev

Kasatkin

et al. 2021

Sensors

View full text Add to dashboard Cite

show abstract

“…При расстоянии между проводником тока и мостом 1 мм сумма чувствительностей двух мостов составляет 2 мВ/А при опорном напряжении моста 3 В. Чувствительность и сопротивление мостов зависят от температуры. Для снижения температурной чувствительности работу мостов необходимо организовать с помощью источника тока, а не источника напряжения [2].…”

Section: Introductionunclassified

Conversion of amplitude modulated square wave signal from current sensor to pulse duration using PLL circuit

Magerramov

2019

Voprosy radioèlektroniki

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At the moment, almost any electronic product incorporates measuring sensors for converting physical quantities. These devices produce a signal of measurement information in a form suitable for transmission and further conversion. As a rule, the output signal from the measurement sensors undergoes first preprocessing such as amplification, filtering, modulation, etc. After preprocessing the prepared signal, various architectures of analog‑to‑digital converters (ADC) are used. The choice of ADC depends on the parameters of the conversion signal and the dynamic characteristics of the sensors used. This paper considers converting a square‑amplitude modulated signal from a current sensor to a pulse width using a phase‑locked loop (PLL). The architecture of the ADC based on the PLL circuit allows obtaining a linear dependence of the output signal duty cycle on the value of the measured input current. The layout of the device is implemented on a printed circuit board, the main components of which are: current sensor, which is a bridge circuit of magnetoresistive conductors; phase‑sensitive rectifier and microcircuit of a two‑channel PLL circuit made inTechnological Center.

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